BTD4512F3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTD4512F3
SMD Transistor Code: D4512
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 54 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO-263
BTD4512F3 Transistor Equivalent Substitute - Cross-Reference Search
BTD4512F3 Datasheet (PDF)
..1. Size:266K cystek
btd4512f3.pdf
btd4512f3.pdf
Spec. No. : C821F3 Issued Date : 2011.12.02 CYStech Electronics Corp.Revised Date : Page No. : 1/ 8 Low Vcesat NPN Epitaxial Planar Transistor BTD4512F3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features V
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
