All Transistors. BTD4512F3 Datasheet

 

BTD4512F3 Datasheet and Replacement


   Type Designator: BTD4512F3
   SMD Transistor Code: D4512
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 54 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO-263
 

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BTD4512F3 Datasheet (PDF)

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BTD4512F3

Spec. No. : C821F3 Issued Date : 2011.12.02 CYStech Electronics Corp.Revised Date : Page No. : 1/ 8 Low Vcesat NPN Epitaxial Planar Transistor BTD4512F3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features V

Datasheet: BTD2195M3 , BTD2195T3 , BTD2444L3 , BTD2444N3 , BTD2444S3 , BTD2498N3 , BTD2510F3 , BTD2568L3 , 2N4401 , BTD5213J3 , BTD5213L3 , BTD5213M3 , BTD5510F3 , BTD5765B3 , BTD5974B3 , BTD6055J3 , BTD6055M3 .

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