BTD4512F3 Datasheet. Specs and Replacement

Type Designator: BTD4512F3  📄📄 

SMD Transistor Code: D4512

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 54 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: TO-263

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BTD4512F3 datasheet

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BTD4512F3

Spec. No. C821F3 Issued Date 2011.12.02 CYStech Electronics Corp. Revised Date Page No. 1/ 8 Low Vcesat NPN Epitaxial Planar Transistor BTD4512F3 Description The device is manufactured in NPN planar technology by using a Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features V... See More ⇒

Detailed specifications: BTD2195M3, BTD2195T3, BTD2444L3, BTD2444N3, BTD2444S3, BTD2498N3, BTD2510F3, BTD2568L3, 2SB817, BTD5213J3, BTD5213L3, BTD5213M3, BTD5510F3, BTD5765B3, BTD5974B3, BTD6055J3, BTD6055M3

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