All Transistors. BTD5510F3 Datasheet

 

BTD5510F3 Datasheet and Replacement


   Type Designator: BTD5510F3
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 250 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 3000
   Noise Figure, dB: -
   Package: TO-263-3L
 

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BTD5510F3 Datasheet (PDF)

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BTD5510F3

Spec. No. : C658F3 Issued Date : 2005.08.23 CYStech Electronics Corp.Revised Date :2007.03.28 Page No. : 1/4 NPN Epitaxial Planar Transistor BTD5510F3 Description The BTD5510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) High current gain Monolithic construct

Datasheet: BTD2444S3 , BTD2498N3 , BTD2510F3 , BTD2568L3 , BTD4512F3 , BTD5213J3 , BTD5213L3 , BTD5213M3 , S9013 , BTD5765B3 , BTD5974B3 , BTD6055J3 , BTD6055M3 , BTD7520J3 , BTD7521E3 , BTD7521H8 , BTD7521J3 .

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