All Transistors. BTD5510F3 Datasheet

 

BTD5510F3 Datasheet and Replacement


   Type Designator: BTD5510F3
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 250 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 3000
   Noise Figure, dB: -
   Package: TO-263-3L
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BTD5510F3 Datasheet (PDF)

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BTD5510F3

Spec. No. : C658F3 Issued Date : 2005.08.23 CYStech Electronics Corp.Revised Date :2007.03.28 Page No. : 1/4 NPN Epitaxial Planar Transistor BTD5510F3 Description The BTD5510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) High current gain Monolithic construct

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: NSP2955 | 2SC5296 | BLX20 | ZBD853 | FTB1197K | FMMT576 | BD612

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