BTD5510F3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTD5510F3
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 3000
Noise Figure, dB: -
Package: TO-263-3L
BTD5510F3 Transistor Equivalent Substitute - Cross-Reference Search
BTD5510F3 Datasheet (PDF)
..1. Size:139K cystek
btd5510f3.pdf
btd5510f3.pdf
Spec. No. : C658F3 Issued Date : 2005.08.23 CYStech Electronics Corp.Revised Date :2007.03.28 Page No. : 1/4 NPN Epitaxial Planar Transistor BTD5510F3 Description The BTD5510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) High current gain Monolithic construct
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
