BTD5510F3 Datasheet. Specs and Replacement

Type Designator: BTD5510F3  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 3000

Noise Figure, dB: -

Package: TO-263-3L

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BTD5510F3 datasheet

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BTD5510F3

Spec. No. C658F3 Issued Date 2005.08.23 CYStech Electronics Corp. Revised Date 2007.03.28 Page No. 1/4 NPN Epitaxial Planar Transistor BTD5510F3 Description The BTD5510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features High BVCEO Low VCE(SAT) High current gain Monolithic construct... See More ⇒

Detailed specifications: BTD2444S3, BTD2498N3, BTD2510F3, BTD2568L3, BTD4512F3, BTD5213J3, BTD5213L3, BTD5213M3, 13005, BTD5765B3, BTD5974B3, BTD6055J3, BTD6055M3, BTD7520J3, BTD7521E3, BTD7521H8, BTD7521J3

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