BTD8530F3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTD8530F3
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: TO-263
BTD8530F3 Transistor Equivalent Substitute - Cross-Reference Search
BTD8530F3 Datasheet (PDF)
..1. Size:263K cystek
btd8530f3.pdf
btd8530f3.pdf
Spec. No. : C603F3 Issued Date : 2010.06.30 CYStech Electronics Corp.Revised Date : 2010.10.07 Page No. : 1/6 NPN Epitaxial Planar Transistor BTD8530F3 Description The BTD8530F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) High current gain Monolithic construc
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
