All Transistors. BTD8530F3 Datasheet

 

BTD8530F3 Datasheet and Replacement


   Type Designator: BTD8530F3
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 250 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TO-263
 

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BTD8530F3 Datasheet (PDF)

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BTD8530F3

Spec. No. : C603F3 Issued Date : 2010.06.30 CYStech Electronics Corp.Revised Date : 2010.10.07 Page No. : 1/6 NPN Epitaxial Planar Transistor BTD8530F3 Description The BTD8530F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) High current gain Monolithic construc

Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , D667 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .

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