BTD8530F3 Datasheet. Specs and Replacement
Type Designator: BTD8530F3 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 2000
Package: TO-263
BTD8530F3 Substitution
- BJT ⓘ Cross-Reference Search
BTD8530F3 datasheet
Spec. No. C603F3 Issued Date 2010.06.30 CYStech Electronics Corp. Revised Date 2010.10.07 Page No. 1/6 NPN Epitaxial Planar Transistor BTD8530F3 Description The BTD8530F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features High BVCEO Low VCE(SAT) High current gain Monolithic construc... See More ⇒
Detailed specifications: BTD5765B3, BTD5974B3, BTD6055J3, BTD6055M3, BTD7520J3, BTD7521E3, BTD7521H8, BTD7521J3, BC549, BTD9065D3, BTN3A60T3, BTN853L3, BTN1053A3, BTN1053I3, BTN1053K3, BTN1053L3, BTN1053M3
Keywords - BTD8530F3 pdf specs
BTD8530F3 cross reference
BTD8530F3 equivalent finder
BTD8530F3 pdf lookup
BTD8530F3 substitution
BTD8530F3 replacement
