BTN853L3 Specs and Replacement
Type Designator: BTN853L3
SMD Transistor Code: 853
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 75 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: SOT-223
BTN853L3 Substitution
- BJT ⓘ Cross-Reference Search
BTN853L3 datasheet
Spec. No. C821L3 Issued Date 2010.02.05 CYStech Electronics Corp. Revised Date Page No. 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 60V ID 5.2A BTN853L3 RCESAT(max) 55m Features Extremely low equivalent on resistance; RCE(SAT) 60m at 5.2A 5.2A continuous collector current (10.4A peak) Very low saturation voltages Excellent gain c... See More ⇒
Detailed specifications: BTD6055M3, BTD7520J3, BTD7521E3, BTD7521H8, BTD7521J3, BTD8530F3, BTD9065D3, BTN3A60T3, BC556, BTN1053A3, BTN1053I3, BTN1053K3, BTN1053L3, BTN1053M3, BTN1101E3, BTN2222A3, BTN2222AL3
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