BTN853L3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTN853L3
SMD Transistor Code: 853
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 75 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT-223
BTN853L3 Transistor Equivalent Substitute - Cross-Reference Search
BTN853L3 Datasheet (PDF)
btn853l3.pdf
Spec. No. : C821L3 Issued Date : 2010.02.05 CYStech Electronics Corp.Revised Date : Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 60VID 5.2ABTN853L3 RCESAT(max) 55m Features Extremely low equivalent on resistance; RCE(SAT) 60m at 5.2A 5.2A continuous collector current (10.4A peak) Very low saturation voltages Excellent gain c
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