All Transistors. BTN1101E3 Datasheet

 

BTN1101E3 Datasheet and Replacement


   Type Designator: BTN1101E3
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 130 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO-220AB
 

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BTN1101E3 Datasheet (PDF)

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BTN1101E3

Spec. No. : C606E3-A Issued Date : 2005.01.03 CYStech Electronics Corp.Revised Date :2008.01.30 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTN1101E3 Features Low VCE(sat) High BVCEO Excellent current gain characteristics RoHS compliant package Symbol Outline BTN1101E3 TO-220AB BBase CCollector EEmitter B C E Absolute M

Datasheet: BTD9065D3 , BTN3A60T3 , BTN853L3 , BTN1053A3 , BTN1053I3 , BTN1053K3 , BTN1053L3 , BTN1053M3 , 2SC2482 , BTN2222A3 , BTN2222AL3 , BTN2222AN3 , BTN2369A3 , BTN2369N3 , BTN2369S3 , BTN3501E3 , BTN3501F3 .

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