BTN1101E3 Specs and Replacement
Type Designator: BTN1101E3
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 130 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: TO-220AB
BTN1101E3 Substitution
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BTN1101E3 datasheet
Spec. No. C606E3-A Issued Date 2005.01.03 CYStech Electronics Corp. Revised Date 2008.01.30 Page No. 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTN1101E3 Features Low VCE(sat) High BVCEO Excellent current gain characteristics RoHS compliant package Symbol Outline BTN1101E3 TO-220AB B Base C Collector E Emitter B C E Absolute M... See More ⇒
Detailed specifications: BTD9065D3, BTN3A60T3, BTN853L3, BTN1053A3, BTN1053I3, BTN1053K3, BTN1053L3, BTN1053M3, 2N2907, BTN2222A3, BTN2222AL3, BTN2222AN3, BTN2369A3, BTN2369N3, BTN2369S3, BTN3501E3, BTN3501F3
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