BTN5551A3 Specs and Replacement
Type Designator: BTN5551A3
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 52
Package: TO-92
BTN5551A3 Substitution
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BTN5551A3 datasheet
Spec. No. C208A3 Issued Date 2003.06.06 CYStech Electronics Corp. Revised Date 2012.10.02 Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BTN5551A3 Description The BTN5551A3 is designed for general purpose applications requiring high breakdown voltage. Features High collector-emitter breakdown voltage. (BV =160V @ I =1mA) CEO C Complement to BT... See More ⇒
Spec. No. C208K3 Issued Date 2012.06.28 CYStech Electronics Corp. Revised Date 2012.10.02 Page No. 1/6 General Purpose NPN Epitaxial Planar Transistor BTN5551K3 Features High breakdown voltage, BV 160V CEO Pb-free lead plating package Symbol Outline BTN5551K3 TO-92L B Base C Collector E Emitter Absolute Maximum Ratings (Ta=25 C) Paramete... See More ⇒
Detailed specifications: BTN2369S3, BTN3501E3, BTN3501F3, BTN3501I3, BTN3501J3, BTN3904A3, BTN3904N3, BTN3904S3, BDT88, BTN5551K3, BTN6427N3, BTN6718A3, BTN6718D3, BTN8050A3, BTN8050BA3, BTN13003D3, BTN13003T3
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