All Transistors. BTN5551A3 Datasheet

 

BTN5551A3 Datasheet and Replacement


   Type Designator: BTN5551A3
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 52
   Noise Figure, dB: -
   Package: TO-92
 

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BTN5551A3 Datasheet (PDF)

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BTN5551A3

Spec. No. : C208A3 Issued Date : 2003.06.06 CYStech Electronics Corp.Revised Date : 2012.10.02 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTN5551A3Description The BTN5551A3 is designed for general purpose applications requiring high breakdown voltage. Features High collector-emitter breakdown voltage. (BV =160V @ I =1mA) CEO C Complement to BT

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BTN5551A3

Spec. No. : C208K3 Issued Date : 2012.06.28 CYStech Electronics Corp.Revised Date : 2012.10.02 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTN5551K3Features High breakdown voltage, BV 160V CEO Pb-free lead plating package Symbol Outline BTN5551K3 TO-92L BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Paramete

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , TIP42C , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: DRA2144T | 2SA953M | 2SAR513P | MPQ2894R | CDQ10025 | 2SD315

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