BTN6427N3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTN6427N3
SMD Transistor Code: 1N
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 10000
Noise Figure, dB: -
Package: SOT-23
BTN6427N3 Transistor Equivalent Substitute - Cross-Reference Search
BTN6427N3 Datasheet (PDF)
btn6427n3.pdf
Spec. No. : C214N3-A Issued Date : 2005.11.30 CYStech Electronics Corp.Revised Date : 2012.04.23 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTN6427N3Description The BTN6427N3 is a darlington amplifier transistor Pb-free package. Equivalent Circuit Outline BTN6427N3 SOT-23 C B E BBase CCollector EEmitter Absolute Maximum
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
History: 2SA1013-Y | BTC4505M3 | FZT658
History: 2SA1013-Y | BTC4505M3 | FZT658
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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050