BTN6427N3 Specs and Replacement
Type Designator: BTN6427N3
SMD Transistor Code: 1N
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 10000
Package: SOT-23
BTN6427N3 Substitution
- BJT ⓘ Cross-Reference Search
BTN6427N3 datasheet
Spec. No. C214N3-A Issued Date 2005.11.30 CYStech Electronics Corp. Revised Date 2012.04.23 Page No. 1/6 General Purpose NPN Epitaxial Planar Transistor BTN6427N3 Description The BTN6427N3 is a darlington amplifier transistor Pb-free package. Equivalent Circuit Outline BTN6427N3 SOT-23 C B E B Base C Collector E Emitter Absolute Maximum ... See More ⇒
Detailed specifications: BTN3501F3, BTN3501I3, BTN3501J3, BTN3904A3, BTN3904N3, BTN3904S3, BTN5551A3, BTN5551K3, BC547, BTN6718A3, BTN6718D3, BTN8050A3, BTN8050BA3, BTN13003D3, BTN13003T3, BTNA06N3, BTNA14A3
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