All Transistors. BTN6427N3 Datasheet

 

BTN6427N3 Datasheet and Replacement


   Type Designator: BTN6427N3
   SMD Transistor Code: 1N
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 7 pF
   Forward Current Transfer Ratio (hFE), MIN: 10000
   Noise Figure, dB: -
   Package: SOT-23
 

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BTN6427N3 Datasheet (PDF)

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BTN6427N3

Spec. No. : C214N3-A Issued Date : 2005.11.30 CYStech Electronics Corp.Revised Date : 2012.04.23 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTN6427N3Description The BTN6427N3 is a darlington amplifier transistor Pb-free package. Equivalent Circuit Outline BTN6427N3 SOT-23 C B E BBase CCollector EEmitter Absolute Maximum

Datasheet: BTN3501F3 , BTN3501I3 , BTN3501J3 , BTN3904A3 , BTN3904N3 , BTN3904S3 , BTN5551A3 , BTN5551K3 , TIP41C , BTN6718A3 , BTN6718D3 , BTN8050A3 , BTN8050BA3 , BTN13003D3 , BTN13003T3 , BTNA06N3 , BTNA14A3 .

History: DXT2010P5

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