BTN6718A3 Specs and Replacement
Type Designator: BTN6718A3
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.85 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO-92
BTN6718A3 Substitution
- BJT ⓘ Cross-Reference Search
BTN6718A3 datasheet
Spec. No. C823A3 Issued Date 2006.10.16 CYStech Electronics Corp. Revised Date Page No. 1/5 NPN Epitaxial Planar Transistor BTN6718A3 Description The BTN6718A3 is designed for general purpose medium power amplifier and switching applications. Features Low collector saturation voltage High breakdown voltage, V =100V (min.) CEO High collector current, ... See More ⇒
Spec. No. C319D3 Issued Date 2008.05.13 CYStech Electronics Corp. Revised Date Page No. 1/5 General Purpose NPN Epitaxial Planar Transistor BTN6718D3 Features High breakdown voltage, BV 100V CEO Large continuous collector current capability, I =1A(DC) C(MAX) Low collector saturation voltage Pb-free package Symbol Outline BTN6718D3 TO-126ML ... See More ⇒
Detailed specifications: BTN3501I3, BTN3501J3, BTN3904A3, BTN3904N3, BTN3904S3, BTN5551A3, BTN5551K3, BTN6427N3, 2SC5200, BTN6718D3, BTN8050A3, BTN8050BA3, BTN13003D3, BTN13003T3, BTNA06N3, BTNA14A3, BTNA14N3
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