BTN6718A3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTN6718A3
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.85 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO-92
BTN6718A3 Transistor Equivalent Substitute - Cross-Reference Search
BTN6718A3 Datasheet (PDF)
btn6718a3.pdf
Spec. No. : C823A3 Issued Date : 2006.10.16 CYStech Electronics Corp.Revised Date : Page No. : 1/5 NPN Epitaxial Planar Transistor BTN6718A3Description The BTN6718A3 is designed for general purpose medium power amplifier and switching applications. Features Low collector saturation voltage High breakdown voltage, V =100V (min.) CEO High collector current,
btn6718d3.pdf
Spec. No. : C319D3 Issued Date : 2008.05.13 CYStech Electronics Corp.Revised Date : Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTN6718D3Features High breakdown voltage, BV 100V CEO Large continuous collector current capability, I =1A(DC) C(MAX) Low collector saturation voltage Pb-free package Symbol Outline BTN6718D3 TO-126ML
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: NSD459
