BTNA06N3 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BTNA06N3 Specs and Replacement

Type Designator: BTNA06N3

SMD Transistor Code: 1G

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT-23

BTNA06N3 Substitution

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BTNA06N3 datasheet

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Spec. No. C216N3 Issued Date 2003.10.07 CYStech Electronics Corp. Revised Date 2012.10.25 Page No. 1/6 General Purpose NPN Epitaxial Planar Transistor BTNA06N3 Description The BTNA06N3 is designed for use in general purpose amplification and switching application. High current , I = 0.5A C Low V , V = 0.25V(typ.) at I /I = 100mA/10mA CE(sat) CE(sat) C B ... See More ⇒

Detailed specifications: BTN5551K3, BTN6427N3, BTN6718A3, BTN6718D3, BTN8050A3, BTN8050BA3, BTN13003D3, BTN13003T3, C945, BTNA14A3, BTNA14N3, BTNA42A3, BTNA44A3, BTNA44M3, BTNA44N3, BTNA45A3, BTNA45N3