All Transistors. BTNA06N3 Datasheet

 

BTNA06N3 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BTNA06N3
   SMD Transistor Code: 1G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-23

 BTNA06N3 Transistor Equivalent Substitute - Cross-Reference Search

   

BTNA06N3 Datasheet (PDF)

 ..1. Size:250K  cystek
 btna06n3.pdf

BTNA06N3 BTNA06N3

Spec. No. : C216N3 Issued Date : 2003.10.07 CYStech Electronics Corp.Revised Date :2012.10.25 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTNA06N3Description The BTNA06N3 is designed for use in general purpose amplification and switching application. High current , I = 0.5A C Low V , V = 0.25V(typ.) at I /I = 100mA/10mA CE(sat) CE(sat) C B

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: 2SA1027

 

 
Back to Top