All Transistors. BTNA06N3 Datasheet

 

BTNA06N3 Datasheet and Replacement


   Type Designator: BTNA06N3
   SMD Transistor Code: 1G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-23
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BTNA06N3 Datasheet (PDF)

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BTNA06N3

Spec. No. : C216N3 Issued Date : 2003.10.07 CYStech Electronics Corp.Revised Date :2012.10.25 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTNA06N3Description The BTNA06N3 is designed for use in general purpose amplification and switching application. High current , I = 0.5A C Low V , V = 0.25V(typ.) at I /I = 100mA/10mA CE(sat) CE(sat) C B

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: TA2736 | 2SB1188SQ-R | 2SA1669 | 3DF5 | 2SB906O | DTA144WET1G | CSC2335

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