All Transistors. BTNA06N3 Datasheet

 

BTNA06N3 Datasheet and Replacement


   Type Designator: BTNA06N3
   SMD Transistor Code: 1G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-23
 

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BTNA06N3 Datasheet (PDF)

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BTNA06N3

Spec. No. : C216N3 Issued Date : 2003.10.07 CYStech Electronics Corp.Revised Date :2012.10.25 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTNA06N3Description The BTNA06N3 is designed for use in general purpose amplification and switching application. High current , I = 0.5A C Low V , V = 0.25V(typ.) at I /I = 100mA/10mA CE(sat) CE(sat) C B

Datasheet: BTN5551K3 , BTN6427N3 , BTN6718A3 , BTN6718D3 , BTN8050A3 , BTN8050BA3 , BTN13003D3 , BTN13003T3 , 2N5401 , BTNA14A3 , BTNA14N3 , BTNA42A3 , BTNA44A3 , BTNA44M3 , BTNA44N3 , BTNA45A3 , BTNA45N3 .

History: 8550D

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