BTNH10N3 Specs and Replacement
Type Designator: BTNH10N3
SMD Transistor Code: 3E
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 650 MHz
Collector Capacitance (Cc): 0.7 pF
Forward Current Transfer Ratio (hFE), MIN: 52
Package: SOT-23
BTNH10N3 Substitution
- BJT ⓘ Cross-Reference Search
BTNH10N3 datasheet
Spec. No. C201N3-H Issued Date 2005.12.27 CYStech Electronics Corp. Revised Date Page No. 1/5 VHF/UHF NPN Epitaxial Planar Transistor BTNH10N3 Description The BTNH10N3 is designed for use in VHF & UHF oscillators and VHF mixer in tuner of a TV receiver. Features High transition frequency. Very low capacitance. Small Rbb -Cc and high current gain. ... See More ⇒
Spec. No. C201A3-H Issued Date 2003.11.27 CYStech Electronics Corp. Revised Date 2013.11.13 Page No. 1/6 VHF/UHF NPN Epitaxial Planar Transistor BTNH10A3 Description The BTNH10A3 is designed for use in VHF & UHF oscillators and VHF mixer in tuner of a TV receiver. Features High transition frequency. Very low capacitance. Small Rbb -Cc and high curren... See More ⇒
Detailed specifications: BTNA14N3, BTNA42A3, BTNA44A3, BTNA44M3, BTNA44N3, BTNA45A3, BTNA45N3, BTNH10A3, TIP122, BTP949L3, BTP953L3, BTP955J3, BTP955L3, BTP955M3, BTP1955L3, BTP2014L3, BTP2907A3
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