All Transistors. BTP5401A3 Datasheet

 

BTP5401A3 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BTP5401A3
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO-92

 BTP5401A3 Transistor Equivalent Substitute - Cross-Reference Search

   

BTP5401A3 Datasheet (PDF)

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btp5401a3.pdf

BTP5401A3
BTP5401A3

Spec. No. : C307A3 Issued Date : 2003.06.27 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTP5401A3Description The BTP5401A3 is designed for general purpose amplification. Large IC , IC( Max) = -0.6A High BVCEO, BVCEO= -150V Complementary to BTN5551A3. Symbol Outline BTP5401A3TO-92 BBase

Datasheet: BC507FA , BC507FB , BC508 , BC508A , BC508B , BC508C , BC508F , BC508FA , 13007 , BC508FC , BC509 , BC509B , BC509C , BC509F , BC509FB , BC509FC , BC510 .

 

 
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