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BTP5401A3 Specs and Replacement

Type Designator: BTP5401A3

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 150 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: TO-92

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BTP5401A3 datasheet

 ..1. Size:153K  cystek

 btp5401a3.pdf pdf_icon

BTP5401A3

Spec. No. C307A3 Issued Date 2003.06.27 CYStech Electronics Corp. Revised Date Page No. 1/4 General Purpose PNP Epitaxial Planar Transistor BTP5401A3 Description The BTP5401A3 is designed for general purpose amplification. Large IC , IC( Max) = -0.6A High BVCEO, BVCEO= -150V Complementary to BTN5551A3. Symbol Outline BTP5401A3 TO-92 B Base ... See More ⇒

Detailed specifications: BTP1955L3 , BTP2014L3 , BTP2907A3 , BTP2907AL3 , BTP2907AN3 , BTP2907SL3 , BTP3906A3 , BTP3906N3 , 13003 , BTP8550A3 , BTP8550BA3 , BTP8550N3 , BTP9050N3 , BTPA56N3 , BTPA92A3 , BTPA94A3 , BTPA94N3 .

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