BTP9050N3 Specs and Replacement
Type Designator: BTP9050N3
SMD Transistor Code: LL
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 500 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT-23
BTP9050N3 Substitution
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BTP9050N3 datasheet
Spec. No. C619N3 Issued Date 2012.08.21 CYStech Electronics Corp. Revised Date Page No. 1/7 High Voltage PNP Epitaxial Planar Transistor BTP9050N3 Description High breakdown voltage. (BV =-500V) CEO Low saturation voltage, typical V =-0.11V at Ic/I =-20mA/-2mA. CE(sat) B Complementary to BTNA45N3 Pb-free lead plating and halogen-free package Symb... See More ⇒
Detailed specifications: BTP2907AN3, BTP2907SL3, BTP3906A3, BTP3906N3, BTP5401A3, BTP8550A3, BTP8550BA3, BTP8550N3, BC327, BTPA56N3, BTPA92A3, BTPA94A3, BTPA94N3, BU941ZE3, BU941ZF3, BU941ZFP, BU941ZLE3
Keywords - BTP9050N3 pdf specs
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