All Transistors. BTPA56N3 Datasheet

 

BTPA56N3 Datasheet and Replacement


   Type Designator: BTPA56N3
   SMD Transistor Code: 2G
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.35 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 7 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-23
 

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BTPA56N3 Datasheet (PDF)

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BTPA56N3

Spec. No. : C217N3 CYStech Electronics Corp. Issued Date : 2013.06.26 Revised Date : Page No. : 1/8 PNP Epitaxial Planar Transistor BTPA56N3 Features Low VCE(sat), VCE(sat)=-0.07 V (typ), at IC / IB = -100mA / -10mA Excellent current gain characteristics Pb-free lead plating and halogen-free package Symbol Outline SOT-23 BTPA56N3BBase CCollector

Datasheet: BTP2907SL3 , BTP3906A3 , BTP3906N3 , BTP5401A3 , BTP8550A3 , BTP8550BA3 , BTP8550N3 , BTP9050N3 , TIP31C , BTPA92A3 , BTPA94A3 , BTPA94N3 , BU941ZE3 , BU941ZF3 , BU941ZFP , BU941ZLE3 , BU941ZP3 .

History: 2SA505O | 3CA1370 | DTC123YKAFRA | 2SC979 | CTP1033 | TD13005 | MP506

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