BTPA56N3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTPA56N3
SMD Transistor Code: 2G
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT-23
BTPA56N3 Transistor Equivalent Substitute - Cross-Reference Search
BTPA56N3 Datasheet (PDF)
..1. Size:277K cystek
btpa56n3.pdf
btpa56n3.pdf
Spec. No. : C217N3 CYStech Electronics Corp. Issued Date : 2013.06.26 Revised Date : Page No. : 1/8 PNP Epitaxial Planar Transistor BTPA56N3 Features Low VCE(sat), VCE(sat)=-0.07 V (typ), at IC / IB = -100mA / -10mA Excellent current gain characteristics Pb-free lead plating and halogen-free package Symbol Outline SOT-23 BTPA56N3BBase CCollector
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 431 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
