BTPA56N3 Specs and Replacement
Type Designator: BTPA56N3
SMD Transistor Code: 2G
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT-23
BTPA56N3 Substitution
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BTPA56N3 datasheet
Spec. No. C217N3 CYStech Electronics Corp. Issued Date 2013.06.26 Revised Date Page No. 1/8 PNP Epitaxial Planar Transistor BTPA56N3 Features Low VCE(sat), VCE(sat)=-0.07 V (typ), at IC / IB = -100mA / -10mA Excellent current gain characteristics Pb-free lead plating and halogen-free package Symbol Outline SOT-23 BTPA56N3 B Base C Collector ... See More ⇒
Detailed specifications: BTP2907SL3, BTP3906A3, BTP3906N3, BTP5401A3, BTP8550A3, BTP8550BA3, BTP8550N3, BTP9050N3, A733, BTPA92A3, BTPA94A3, BTPA94N3, BU941ZE3, BU941ZF3, BU941ZFP, BU941ZLE3, BU941ZP3
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