All Transistors. BTPA56N3 Datasheet

 

BTPA56N3 Datasheet and Replacement


   Type Designator: BTPA56N3
   SMD Transistor Code: 2G
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.35 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 7 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-23
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BTPA56N3 Datasheet (PDF)

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BTPA56N3

Spec. No. : C217N3 CYStech Electronics Corp. Issued Date : 2013.06.26 Revised Date : Page No. : 1/8 PNP Epitaxial Planar Transistor BTPA56N3 Features Low VCE(sat), VCE(sat)=-0.07 V (typ), at IC / IB = -100mA / -10mA Excellent current gain characteristics Pb-free lead plating and halogen-free package Symbol Outline SOT-23 BTPA56N3BBase CCollector

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: BCW68RH | CSC1684R

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