BTPA56N3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTPA56N3
SMD Transistor Code: 2G
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT-23
BTPA56N3 Transistor Equivalent Substitute - Cross-Reference Search
BTPA56N3 Datasheet (PDF)
btpa56n3.pdf
Spec. No. : C217N3 CYStech Electronics Corp. Issued Date : 2013.06.26 Revised Date : Page No. : 1/8 PNP Epitaxial Planar Transistor BTPA56N3 Features Low VCE(sat), VCE(sat)=-0.07 V (typ), at IC / IB = -100mA / -10mA Excellent current gain characteristics Pb-free lead plating and halogen-free package Symbol Outline SOT-23 BTPA56N3BBase CCollector
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .