All Transistors. FBP5096G3 Datasheet

 

FBP5096G3 Datasheet and Replacement


   Type Designator: FBP5096G3
   SMD Transistor Code: TE
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 18 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Emitter-Base Voltage |Veb|: 2.5 V
   Maximum Collector Current |Ic max|: 0.02 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 9000 MHz
   Collector Capacitance (Cc): 0.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 82
   Noise Figure, dB: -
   Package: WEFBP-03A
 

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FBP5096G3 Datasheet (PDF)

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FBP5096G3

Spec. No. : C212G3 Issued Date : 2006.07.18 CYStech Electronics Corp.Revised Date :2006.10.03 Page No. : 1/9 High Cutoff Frequency NPN Epitaxial Planar Transistor FBP5096G3 Description The FBP5096G3 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and CATV band. Symbol Outline FBP5096G3 WBFBP-03A BBase CCollector EEmitter Feature

Datasheet: BU941ZFP , BU941ZLE3 , BU941ZP3 , D44H11E3 , D44H11J3 , D45H11E3 , D45H11J3 , DTA144WS3 , 2SD2499 , HBA1873S5 , HBA8573S6R , HBC8471S6R , HBC8472S6R , HBN2411S6R , HBN2412C6 , HBN2412S6R , HBN2444S6R .

History: 2SC822 | MMPQ6842 | GS111E | DTL8754 | RN49A1 | BUD47A | HEPS0011

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