FBP5096G3 Specs and Replacement

Type Designator: FBP5096G3

SMD Transistor Code: TE

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 18 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Emitter-Base Voltage |Veb|: 2.5 V

Maximum Collector Current |Ic max|: 0.02 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 9000 MHz

Collector Capacitance (Cc): 0.7 pF

Forward Current Transfer Ratio (hFE), MIN: 82

Noise Figure, dB: -

Package: WEFBP-03A

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FBP5096G3 datasheet

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FBP5096G3

Spec. No. C212G3 Issued Date 2006.07.18 CYStech Electronics Corp. Revised Date 2006.10.03 Page No. 1/9 High Cutoff Frequency NPN Epitaxial Planar Transistor FBP5096G3 Description The FBP5096G3 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and CATV band. Symbol Outline FBP5096G3 WBFBP-03A B Base C Collector E Emitter Feature... See More ⇒

Detailed specifications: BU941ZFP, BU941ZLE3, BU941ZP3, D44H11E3, D44H11J3, D45H11E3, D45H11J3, DTA144WS3, TIP31, HBA1873S5, HBA8573S6R, HBC8471S6R, HBC8472S6R, HBN2411S6R, HBN2412C6, HBN2412S6R, HBN2444S6R

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