All Transistors. FBP5096G3 Datasheet

 

FBP5096G3 Datasheet, Equivalent, Cross Reference Search


   Type Designator: FBP5096G3
   SMD Transistor Code: TE
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 18 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Emitter-Base Voltage |Veb|: 2.5 V
   Maximum Collector Current |Ic max|: 0.02 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 9000 MHz
   Collector Capacitance (Cc): 0.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 82
   Noise Figure, dB: -
   Package: WEFBP-03A

 FBP5096G3 Transistor Equivalent Substitute - Cross-Reference Search

   

FBP5096G3 Datasheet (PDF)

 ..1. Size:274K  cystek
 fbp5096g3.pdf

FBP5096G3 FBP5096G3

Spec. No. : C212G3 Issued Date : 2006.07.18 CYStech Electronics Corp.Revised Date :2006.10.03 Page No. : 1/9 High Cutoff Frequency NPN Epitaxial Planar Transistor FBP5096G3 Description The FBP5096G3 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and CATV band. Symbol Outline FBP5096G3 WBFBP-03A BBase CCollector EEmitter Feature

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: BD109 | 2SD1725 | 2SD1903Q

 

 
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