HBA8573S6R Specs and Replacement
Type Designator: HBA8573S6R
SMD Transistor Code: BL
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: SOT-363R
HBA8573S6R Substitution
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HBA8573S6R datasheet
Spec. No. C306S6R Issued Date 2010.03.22 CYStech Electronics Corp. Revised Date 2011.02.22 Page No. 1/6 General Purpose PNP Epitaxial Planar Transistors (dual transistors) HBA8573S6R Features Two BTA1037 chips in a SOT-363R package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference.... See More ⇒
Detailed specifications: BU941ZP3, D44H11E3, D44H11J3, D45H11E3, D45H11J3, DTA144WS3, FBP5096G3, HBA1873S5, 2SD313, HBC8471S6R, HBC8472S6R, HBN2411S6R, HBN2412C6, HBN2412S6R, HBN2444S6R, HBN2515S6R, HBN3101S6R
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