All Transistors. HBA8573S6R Datasheet

 

HBA8573S6R Datasheet and Replacement


   Type Designator: HBA8573S6R
   SMD Transistor Code: BL
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 2 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT-363R
 

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HBA8573S6R Datasheet (PDF)

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HBA8573S6R

Spec. No. : C306S6R Issued Date : 2010.03.22 CYStech Electronics Corp.Revised Date : 2011.02.22 Page No. : 1/6 General Purpose PNP Epitaxial Planar Transistors (dual transistors) HBA8573S6R Features Two BTA1037 chips in a SOT-363R package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference.

Datasheet: BU941ZP3 , D44H11E3 , D44H11J3 , D45H11E3 , D45H11J3 , DTA144WS3 , FBP5096G3 , HBA1873S5 , BC558 , HBC8471S6R , HBC8472S6R , HBN2411S6R , HBN2412C6 , HBN2412S6R , HBN2444S6R , HBN2515S6R , HBN3101S6R .

History: 2SB333H | GF147 | SC257A | BCP51-10 | 2SC2174 | TMPA812M3 | BRT60

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