All Transistors. HBN2515S6R Datasheet

 

HBN2515S6R Datasheet, Equivalent, Cross Reference Search


   Type Designator: HBN2515S6R
   SMD Transistor Code: N9
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 6.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 180
   Noise Figure, dB: -
   Package: SOT-363R

 HBN2515S6R Transistor Equivalent Substitute - Cross-Reference Search

   

HBN2515S6R Datasheet (PDF)

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 hbn2515s6r.pdf

HBN2515S6R HBN2515S6R

Spec. No. : C223S6-A Issued Date : 2007.07.18 CYStech Electronics Corp.Revised Date :2011.02.22 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor HBN2515S6R (Dual Transistors) Features Two BTD2515 chips in a SOT-363 package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference.

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: BCX6825

 

 
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