HBN2515S6R Specs and Replacement
Type Designator: HBN2515S6R
SMD Transistor Code: N9
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6.5 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Package: SOT-363R
HBN2515S6R Substitution
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HBN2515S6R datasheet
Spec. No. C223S6-A Issued Date 2007.07.18 CYStech Electronics Corp. Revised Date 2011.02.22 Page No. 1/6 Low Vcesat NPN Epitaxial Planar Transistor HBN2515S6R (Dual Transistors) Features Two BTD2515 chips in a SOT-363 package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference. ... See More ⇒
Detailed specifications: HBA1873S5, HBA8573S6R, HBC8471S6R, HBC8472S6R, HBN2411S6R, HBN2412C6, HBN2412S6R, HBN2444S6R, C3198, HBN3101S6R, HBNP45C6, HBNP45S6R, HBNP54S6R, HBNP1268Q8, HBNP2227S6R, HBNP3946S6R, HBNP5213G6
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