All Transistors. HBN2515S6R Datasheet

 

HBN2515S6R Datasheet and Replacement


   Type Designator: HBN2515S6R
   SMD Transistor Code: N9
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 6.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 180
   Noise Figure, dB: -
   Package: SOT-363R
 

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HBN2515S6R Datasheet (PDF)

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HBN2515S6R

Spec. No. : C223S6-A Issued Date : 2007.07.18 CYStech Electronics Corp.Revised Date :2011.02.22 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor HBN2515S6R (Dual Transistors) Features Two BTD2515 chips in a SOT-363 package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference.

Datasheet: HBA1873S5 , HBA8573S6R , HBC8471S6R , HBC8472S6R , HBN2411S6R , HBN2412C6 , HBN2412S6R , HBN2444S6R , 13005 , HBN3101S6R , HBNP45C6 , HBNP45S6R , HBNP54S6R , HBNP1268Q8 , HBNP2227S6R , HBNP3946S6R , HBNP5213G6 .

History: SE1002 | BC858BDW | BUP53 | BUP50 | M8550LT1 | KRA524T | KT361B2

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