HBN3101S6R Specs and Replacement
Type Designator: HBN3101S6R
SMD Transistor Code: K4N
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT-363
HBN3101S6R Substitution
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HBN3101S6R datasheet
Spec. No. C234S6R Issued Date 2013.10.21 CYStech Electronics Corp. Revised Date Page No. 1/6 NPN Epitaxial Planar Transistor HBN3101S6R (Dual Transistors) Features Two BF422 chips in a SOT-363 package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area c... See More ⇒
Detailed specifications: HBA8573S6R, HBC8471S6R, HBC8472S6R, HBN2411S6R, HBN2412C6, HBN2412S6R, HBN2444S6R, HBN2515S6R, 2SC945, HBNP45C6, HBNP45S6R, HBNP54S6R, HBNP1268Q8, HBNP2227S6R, HBNP3946S6R, HBNP5213G6, HBNPZ1NS6R
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