All Transistors. HBNP1268Q8 Datasheet

 

HBNP1268Q8 Datasheet and Replacement


   Type Designator: HBNP1268Q8
   SMD Transistor Code: NP1268
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 1.38 W
   Maximum Collector-Base Voltage |Vcb|: 80(30) V
   Maximum Collector-Emitter Voltage |Vce|: 50(30) V
   Maximum Emitter-Base Voltage |Veb|: 6(5) V
   Maximum Collector Current |Ic max|: 4(5) A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 90(100) MHz
   Collector Capacitance (Cc): 13 pF
   Forward Current Transfer Ratio (hFE), MIN: 280(140)
   Noise Figure, dB: -
   Package: SOP-8
 

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HBNP1268Q8 Datasheet (PDF)

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HBNP1268Q8

Spec. No. : C198Q8 Issued Date : 2010.11.29 CYStech Electronics Corp.Revised Date : Page No. : 1/8 General Purpose NPN / PNP Epitaxial Planar Transistors (quadruple transistors) NPN PNPHBNP1268Q8 BVCEO 50V -30VIC 4A -5ARCE(SAT)(TYP) 125m 180m Features Includes two NPN chips and two PNP chips in a SOP-8 package. Pb-free lead plating package Equivalent Cir

Datasheet: HBN2412C6 , HBN2412S6R , HBN2444S6R , HBN2515S6R , HBN3101S6R , HBNP45C6 , HBNP45S6R , HBNP54S6R , 8550 , HBNP2227S6R , HBNP3946S6R , HBNP5213G6 , HBNPZ1NS6R , HBP1036S6R , HBP1037C6 , HBP1037S5 , HBP1037S6R .

History: BCAP08 | NA22YI | 2SCR512P | HSD468 | SM3174 | IDC3307 | 2N1383GN

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