HBNP1268Q8 Specs and Replacement

Type Designator: HBNP1268Q8

SMD Transistor Code: NP1268

Material of Transistor: Si

Polarity: NPN*PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.38 W

Maximum Collector-Base Voltage |Vcb|: 80(30) V

Maximum Collector-Emitter Voltage |Vce|: 50(30) V

Maximum Emitter-Base Voltage |Veb|: 6(5) V

Maximum Collector Current |Ic max|: 4(5) A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 90(100) MHz

Collector Capacitance (Cc): 13 pF

Forward Current Transfer Ratio (hFE), MIN: 280(140)

Noise Figure, dB: -

Package: SOP-8

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HBNP1268Q8 datasheet

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HBNP1268Q8

Spec. No. C198Q8 Issued Date 2010.11.29 CYStech Electronics Corp. Revised Date Page No. 1/8 General Purpose NPN / PNP Epitaxial Planar Transistors (quadruple transistors) NPN PNP HBNP1268Q8 BVCEO 50V -30V IC 4A -5A RCE(SAT)(TYP) 125m 180m Features Includes two NPN chips and two PNP chips in a SOP-8 package. Pb-free lead plating package Equivalent Cir... See More ⇒

Detailed specifications: HBN2412C6, HBN2412S6R, HBN2444S6R, HBN2515S6R, HBN3101S6R, HBNP45C6, HBNP45S6R, HBNP54S6R, 2SC2655, HBNP2227S6R, HBNP3946S6R, HBNP5213G6, HBNPZ1NS6R, HBP1036S6R, HBP1037C6, HBP1037S5, HBP1037S6R

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