All Transistors. HBNP1268Q8 Datasheet

 

HBNP1268Q8 Datasheet and Replacement


   Type Designator: HBNP1268Q8
   SMD Transistor Code: NP1268
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 1.38 W
   Maximum Collector-Base Voltage |Vcb|: 80(30) V
   Maximum Collector-Emitter Voltage |Vce|: 50(30) V
   Maximum Emitter-Base Voltage |Veb|: 6(5) V
   Maximum Collector Current |Ic max|: 4(5) A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 90(100) MHz
   Collector Capacitance (Cc): 13 pF
   Forward Current Transfer Ratio (hFE), MIN: 280(140)
   Noise Figure, dB: -
   Package: SOP-8
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HBNP1268Q8 Datasheet (PDF)

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HBNP1268Q8

Spec. No. : C198Q8 Issued Date : 2010.11.29 CYStech Electronics Corp.Revised Date : Page No. : 1/8 General Purpose NPN / PNP Epitaxial Planar Transistors (quadruple transistors) NPN PNPHBNP1268Q8 BVCEO 50V -30VIC 4A -5ARCE(SAT)(TYP) 125m 180m Features Includes two NPN chips and two PNP chips in a SOP-8 package. Pb-free lead plating package Equivalent Cir

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2SC1262 | BC167 | 2SA1483 | ECG2360 | BDX85B | LDTD113EET1G | SGSF321

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