All Transistors. HBNP3946S6R Datasheet

 

HBNP3946S6R Datasheet, Equivalent, Cross Reference Search


   Type Designator: HBNP3946S6R
   SMD Transistor Code: 46
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 60(40) V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 6(5) V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-363R

 HBNP3946S6R Transistor Equivalent Substitute - Cross-Reference Search

   

HBNP3946S6R Datasheet (PDF)

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 hbnp3946s6r.pdf

HBNP3946S6R HBNP3946S6R

Spec. No. : C902S6R Issued Date : 2003.03.18 CYStech Electronics Corp.Revised Date : 2010.03.11 Page No. : 1/12 General Purpose NPN / PNP Epitaxial Planar Transistors (dual transistors) HBNP3946S6R Features Includes a 2N3904 chip and 2N3906 chip in a SOT-363R package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independe

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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