All Transistors. HBNP3946S6R Datasheet

 

HBNP3946S6R Datasheet and Replacement


   Type Designator: HBNP3946S6R
   SMD Transistor Code: 46
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 60(40) V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 6(5) V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-363R
 

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HBNP3946S6R Datasheet (PDF)

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HBNP3946S6R

Spec. No. : C902S6R Issued Date : 2003.03.18 CYStech Electronics Corp.Revised Date : 2010.03.11 Page No. : 1/12 General Purpose NPN / PNP Epitaxial Planar Transistors (dual transistors) HBNP3946S6R Features Includes a 2N3904 chip and 2N3906 chip in a SOT-363R package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independe

Datasheet: HBN2444S6R , HBN2515S6R , HBN3101S6R , HBNP45C6 , HBNP45S6R , HBNP54S6R , HBNP1268Q8 , HBNP2227S6R , S9013 , HBNP5213G6 , HBNPZ1NS6R , HBP1036S6R , HBP1037C6 , HBP1037S5 , HBP1037S6R , HBP2907S6R , HQN2498QF .

History: 2N651A | 2N234 | GT400-8A | NA22XY | 2SA766 | UPT612

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