HBNP3946S6R Specs and Replacement
Type Designator: HBNP3946S6R
SMD Transistor Code: 46
Material of Transistor: Si
Polarity: NPN*PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 60(40) V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6(5) V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT-363R
HBNP3946S6R Substitution
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HBNP3946S6R datasheet
Spec. No. C902S6R Issued Date 2003.03.18 CYStech Electronics Corp. Revised Date 2010.03.11 Page No. 1/12 General Purpose NPN / PNP Epitaxial Planar Transistors (dual transistors) HBNP3946S6R Features Includes a 2N3904 chip and 2N3906 chip in a SOT-363R package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independe... See More ⇒
Detailed specifications: HBN2444S6R, HBN2515S6R, HBN3101S6R, HBNP45C6, HBNP45S6R, HBNP54S6R, HBNP1268Q8, HBNP2227S6R, 13005, HBNP5213G6, HBNPZ1NS6R, HBP1036S6R, HBP1037C6, HBP1037S5, HBP1037S6R, HBP2907S6R, HQN2498QF
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