HBNP5213G6 Specs and Replacement
Type Designator: HBNP5213G6
SMD Transistor Code: 5213
Material of Transistor: Si
Polarity: NPN*PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.14 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 6(11) pF
Forward Current Transfer Ratio (hFE), MIN: 180
Package: TSOP-6
HBNP5213G6 Substitution
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HBNP5213G6 datasheet
Spec. No. C627G6 Issued Date 2013.10.17 CYStech Electronics Corp. Revised Date Page No. 1/9 NPN AND PNP Dual Epitaxial Planar Transistors HBNP5213G6 Features High BV CEO High current Excellent DC current gain characteristics Pb-free lead plating and halogen-free package Equivalent Circuit Outline HBNP5213G6 TSOP-6 C2 E1 C1 B2 E2 B ... See More ⇒
Spec. No. C904S6R Issued Date 2013.10.21 CYStech Electronics Corp. Revised Date Page No. 1/9 General Purpose NPN / PNP Epitaxial Planar Transistors (dual transistors) HBNP54S6R Features Includes a BTC3906 chip and BTA1514 chip in a SOT-363 package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminati... See More ⇒
Detailed specifications: HBN2515S6R, HBN3101S6R, HBNP45C6, HBNP45S6R, HBNP54S6R, HBNP1268Q8, HBNP2227S6R, HBNP3946S6R, D209L, HBNPZ1NS6R, HBP1036S6R, HBP1037C6, HBP1037S5, HBP1037S6R, HBP2907S6R, HQN2498QF, HQP1498QF
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