All Transistors. HBP2907S6R Datasheet

 

HBP2907S6R Datasheet and Replacement


   Type Designator: HBP2907S6R
   SMD Transistor Code: 2F
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-363R
 

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HBP2907S6R Datasheet (PDF)

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HBP2907S6R

Spec. No. : C317S6R Issued Date : 2006.11.08 CYStech Electronics Corp.Revised Date : Page No. : 1/5 General Purpose PNP Epitaxial Planar Transistors (dual transistors) HBP2907S6R Features Two BTP2907 chips in a SOT-363 package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference. Mount

Datasheet: HBNP2227S6R , HBNP3946S6R , HBNP5213G6 , HBNPZ1NS6R , HBP1036S6R , HBP1037C6 , HBP1037S5 , HBP1037S6R , TIP2955 , HQN2498QF , HQP1498QF , PZT2222AL3 , PZT5551L3 , STBV32A3 , TIP31CE3 , TIP31CJ3 , TIP50I3 .

History: S1299

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