All Transistors. HBP2907S6R Datasheet

 

HBP2907S6R Datasheet, Equivalent, Cross Reference Search


   Type Designator: HBP2907S6R
   SMD Transistor Code: 2F
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-363R

 HBP2907S6R Transistor Equivalent Substitute - Cross-Reference Search

   

HBP2907S6R Datasheet (PDF)

 ..1. Size:190K  cystek
 hbp2907s6r.pdf

HBP2907S6R HBP2907S6R

Spec. No. : C317S6R Issued Date : 2006.11.08 CYStech Electronics Corp.Revised Date : Page No. : 1/5 General Purpose PNP Epitaxial Planar Transistors (dual transistors) HBP2907S6R Features Two BTP2907 chips in a SOT-363 package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference. Mount

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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