STBV32A3 Specs and Replacement

Type Designator: STBV32A3

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 450 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Collector Capacitance (Cc): 21 pF

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO-92

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STBV32A3 datasheet

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STBV32A3

Spec. No. C827A3 Issued Date 2007.09.20 CYStech Electronics Corp. Revised Date 2014.05.08 Page No. 1/6 High Voltage NPN Power Transistor STBV32A3 Features High breakdown voltage, V =450V (min.) CEO High collector current, I =1.5A (DC) C(max) Pb-free lead plating package Symbol Outline STBV32A3 TO-92 B Base C Collector E Emitter E C B ... See More ⇒

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STBV32A3

STBV32 High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications Compact fluorescent lamps (CFLS) TO-92 TO-92AP SMPS for battery charger Description Figure 1. Internal schematic diagram The device is manufactured us... See More ⇒

Detailed specifications: HBP1037C6, HBP1037S5, HBP1037S6R, HBP2907S6R, HQN2498QF, HQP1498QF, PZT2222AL3, PZT5551L3, BC556, TIP31CE3, TIP31CJ3, TIP50I3, TIP50J3, 2SC5858, 2SC6118LS, MJW18020G, NE68000

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