All Transistors. STBV32A3 Datasheet

 

STBV32A3 Datasheet and Replacement


   Type Designator: STBV32A3
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.6 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 450 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Collector Capacitance (Cc): 21 pF
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: TO-92
 

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STBV32A3 Datasheet (PDF)

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STBV32A3

Spec. No. : C827A3 Issued Date : 2007.09.20 CYStech Electronics Corp.Revised Date : 2014.05.08 Page No. : 1/6 High Voltage NPN Power Transistor STBV32A3Features High breakdown voltage, V =450V (min.) CEO High collector current, I =1.5A (DC) C(max) Pb-free lead plating package Symbol Outline STBV32A3 TO-92 BBase CCollector EEmitter E C B

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STBV32A3

STBV32High voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speedApplications Compact fluorescent lamps (CFLS)TO-92 TO-92AP SMPS for battery chargerDescriptionFigure 1. Internal schematic diagramThe device is manufactured us

Datasheet: HBP1037C6 , HBP1037S5 , HBP1037S6R , HBP2907S6R , HQN2498QF , HQP1498QF , PZT2222AL3 , PZT5551L3 , BC639 , TIP31CE3 , TIP31CJ3 , TIP50I3 , TIP50J3 , 2SC5858 , 2SC6118LS , MJW18020G , NE68000 .

History: SST6839 | D39V3 | 2N2315 | 2SC5066 | S1350 | 2N3469 | 2S48

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