STBV32A3 Datasheet, Equivalent, Cross Reference Search
Type Designator: STBV32A3
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 21 pF
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TO-92
STBV32A3 Transistor Equivalent Substitute - Cross-Reference Search
STBV32A3 Datasheet (PDF)
stbv32a3.pdf
Spec. No. : C827A3 Issued Date : 2007.09.20 CYStech Electronics Corp.Revised Date : 2014.05.08 Page No. : 1/6 High Voltage NPN Power Transistor STBV32A3Features High breakdown voltage, V =450V (min.) CEO High collector current, I =1.5A (DC) C(max) Pb-free lead plating package Symbol Outline STBV32A3 TO-92 BBase CCollector EEmitter E C B
stbv32.pdf
STBV32High voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speedApplications Compact fluorescent lamps (CFLS)TO-92 TO-92AP SMPS for battery chargerDescriptionFigure 1. Internal schematic diagramThe device is manufactured us
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
