MJW18020G Specs and Replacement
Type Designator: MJW18020G
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 13 MHz
Collector Capacitance (Cc): 300 pF
Forward Current Transfer Ratio (hFE), MIN: 14
Package: TO247
MJW18020G Substitution
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MJW18020G datasheet
MJW18020 NPN Silicon Power Transistors High Voltage Planar The MJW18020 planar High Voltage Power Transistor is specifically Designed for motor control applications, high power http //onsemi.com supplies and UPS s for which the high reproducibility of DC and Switching parameters minimizes the dead time in bridge 30 AMPERES configurations. 1000 VOLTS BVCES Features 450 VOLTS BVCEO... See More ⇒
Detailed specifications: PZT5551L3, STBV32A3, TIP31CE3, TIP31CJ3, TIP50I3, TIP50J3, 2SC5858, 2SC6118LS, MPSA42, NE68000, NE68018, NE68019, NE68030, NE68033, NE68035, NE68039, 2SC5618
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