All Transistors. MJW18020G Datasheet

 

MJW18020G Datasheet and Replacement


   Type Designator: MJW18020G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 250 W
   Maximum Collector-Base Voltage |Vcb|: 1000 V
   Maximum Collector-Emitter Voltage |Vce|: 450 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 30 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 13 MHz
   Collector Capacitance (Cc): 300 pF
   Forward Current Transfer Ratio (hFE), MIN: 14
   Noise Figure, dB: -
   Package: TO247
 

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MJW18020G Datasheet (PDF)

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MJW18020G

MJW18020NPN Silicon PowerTransistors High VoltagePlanarThe MJW18020 planar High Voltage Power Transistor isspecifically Designed for motor control applications, high powerhttp://onsemi.comsupplies and UPSs for which the high reproducibility of DC andSwitching parameters minimizes the dead time in bridge30 AMPERESconfigurations.1000 VOLTS BVCESFeatures450 VOLTS BVCEO

Datasheet: PZT5551L3 , STBV32A3 , TIP31CE3 , TIP31CJ3 , TIP50I3 , TIP50J3 , 2SC5858 , 2SC6118LS , 13001-A , NE68000 , NE68018 , NE68019 , NE68030 , NE68033 , NE68035 , NE68039 , 2SC5618 .

History: 2SA1705 | A1162 | 40396 | BSW72 | MPQ5131 | K2103A | GET4

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