MJW18020G Datasheet, Equivalent, Cross Reference Search
Type Designator: MJW18020G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 13 MHz
Collector Capacitance (Cc): 300 pF
Forward Current Transfer Ratio (hFE), MIN: 14
Noise Figure, dB: -
Package: TO247
MJW18020G Transistor Equivalent Substitute - Cross-Reference Search
MJW18020G Datasheet (PDF)
mjw18020.pdf
MJW18020NPN Silicon PowerTransistors High VoltagePlanarThe MJW18020 planar High Voltage Power Transistor isspecifically Designed for motor control applications, high powerhttp://onsemi.comsupplies and UPSs for which the high reproducibility of DC andSwitching parameters minimizes the dead time in bridge30 AMPERESconfigurations.1000 VOLTS BVCESFeatures450 VOLTS BVCEO
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: PMP4501QAS | 2SD2250 | MM1803 | BD528
History: PMP4501QAS | 2SD2250 | MM1803 | BD528
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