MJW18020G Datasheet and Replacement
Type Designator: MJW18020G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 13 MHz
Collector Capacitance (Cc): 300 pF
Forward Current Transfer Ratio (hFE), MIN: 14
Noise Figure, dB: -
Package: TO247
MJW18020G Substitution
MJW18020G Datasheet (PDF)
mjw18020.pdf

MJW18020NPN Silicon PowerTransistors High VoltagePlanarThe MJW18020 planar High Voltage Power Transistor isspecifically Designed for motor control applications, high powerhttp://onsemi.comsupplies and UPSs for which the high reproducibility of DC andSwitching parameters minimizes the dead time in bridge30 AMPERESconfigurations.1000 VOLTS BVCESFeatures450 VOLTS BVCEO
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
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History: KSP06 | MPS5139



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