H1061 Specs and Replacement
Type Designator: H1061
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO220AB
H1061 Substitution
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H1061 datasheet
H1061 TRIPLE DIFFUSED SILICON NPN TRANSISTOR designed for low frequency power amplifier MAXIMUM RATINGS Characteristic Symbol Value Unit Collector Base Voltage V 100 V CBO Collector Emitter Voltage V 80 V CEO Emitter Base Voltage V 5 V EBO Collector Current (DC) I 4 A C Collector Current (Peak) I 8 A C Collector power Dissipation P 40 W C 1 Base Junction Temperature... See More ⇒
ST H1061 NPN Plastic Power Transistor Low frequency power amplifier TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Emitter Voltage VCEO 50 V Collector Base Voltage VCBO 50 V Emitter Base Voltage VEBO 4 V Collector Current IC 3 A Power Dissipation Ptot 25 W O Junction Temperature Tj 150 C O Storage Temperature Range TS -45... See More ⇒
Detailed specifications: NE68019, NE68030, NE68033, NE68035, NE68039, 2SC5618, 2SC5253, 2SC5855A, D667, 2SD5703, H945R, H945Q, H945P, H945K, H945, KT925A, KT925B
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