H1061 Datasheet, Equivalent, Cross Reference Search
Type Designator: H1061
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO220AB
H1061 Transistor Equivalent Substitute - Cross-Reference Search
H1061 Datasheet (PDF)
h1061.pdf
H1061 TRIPLE DIFFUSED SILICON NPN TRANSISTOR designed for low frequency power amplifier MAXIMUM RATINGS Characteristic Symbol Value UnitCollector Base Voltage V 100 VCBOCollector Emitter Voltage V 80 VCEOEmitter Base Voltage V 5 VEBOCollector Current (DC) I 4 ACCollector Current (Peak) I 8 ACCollector power Dissipation P 40 WC1 : Base Junction Temperature
sth1061.pdf
ST H1061 NPN Plastic Power Transistor Low frequency power amplifier TO-220 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Emitter Voltage VCEO 50 V Collector Base Voltage VCBO 50 VEmitter Base Voltage VEBO 4 VCollector Current IC 3 APower Dissipation Ptot 25 WOJunction Temperature Tj 150 C OStorage Temperature Range TS -45
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: KT208I
