2N6441 Specs and Replacement
Type Designator: 2N6441
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.55 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 160 MHz
Collector Capacitance (Cc): 1.5 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO77
2N6441 Substitution
- BJT ⓘ Cross-Reference Search
2N6441 datasheet
Databook.fxp 1/13/99 2 09 PM Page B-24 B-24 01/99 2N6449, 2N6450 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C High Voltage 2N6449 2N6450 Reverse Gate Source Voltage 300 V 200 V Reverse Gate Drain Voltage 300 V 200 V Continuous Forward Gate Current 10 mA 10 mA Continuous Device Power Dissipation 800 mW 800 mW Power Derati... See More ⇒
Detailed specifications: 2N6436, 2N6436A, 2N6437, 2N6437A, 2N6438, 2N6438A, 2N6439, 2N644, TIP31C, 2N6442, 2N6443, 2N6444, 2N6445, 2N6446, 2N6447, 2N6448, 2N645
Keywords - 2N6441 pdf specs
2N6441 cross reference
2N6441 equivalent finder
2N6441 pdf lookup
2N6441 substitution
2N6441 replacement
