RN2357 Datasheet, Equivalent, Cross Reference Search
Type Designator: RN2357
SMD Transistor Code: Z1
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.21
Maximum Collector Power Dissipation (Pc): 0.1
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 200
MHz
Collector Capacitance (Cc): 3.5
pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SC70
RN2357 Transistor Equivalent Substitute - Cross-Reference Search
RN2357 Datasheet (PDF)
rn2357 2.pdf
RN2357 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) TENTATIVE RN2357 Unit: mmDriver Circuit, Inverter Circuit, and Switching Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process RN2307 and a diode are included in a SC-70 package. Equivalent Circuit (Top View) Bias Resistor ValuesR1
rn2357.pdf
RN2357 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) TENTATIVE RN2357 Unit: mmDriver Circuit, Inverter Circuit, and Switching Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process RN2307 and a diode are included in a SC-70 package. Equivalent Circuit (Top View) Bias Resistor ValuesR1
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
