RN2357 Datasheet. Specs and Replacement
Type Designator: RN2357 ππ
SMD Transistor Code: Z1
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.21
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 Β°C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Package: SC70
RN2357 Substitution
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RN2357 datasheet
RN2357 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) TENTATIVE RN2357 Unit mm Driver Circuit, Inverter Circuit, and Switching Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process RN2307 and a diode are included in a SC-70 package. Equivalent Circuit (Top View) Bias Resistor Values R1... See More ⇒
RN2357 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) TENTATIVE RN2357 Unit mm Driver Circuit, Inverter Circuit, and Switching Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process RN2307 and a diode are included in a SC-70 package. Equivalent Circuit (Top View) Bias Resistor Values R1... See More ⇒
Detailed specifications: 3DD4120PLM, KT922A, KT922B, KT922V, KT922G, KT922D, NTE128, NTE129, 2SC4793, 2SD1886C, 2SD1651C, 2SC945R, 2SC945O, 2SC945Y, 2SC945P, C8050B, C8050C
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