All Transistors. RN2357 Datasheet

 

RN2357 Datasheet and Replacement


   Type Designator: RN2357
   SMD Transistor Code: Z1
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.21
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 3.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SC70
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RN2357 Datasheet (PDF)

 ..1. Size:73K  toshiba
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RN2357

RN2357 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) TENTATIVE RN2357 Unit: mmDriver Circuit, Inverter Circuit, and Switching Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process RN2307 and a diode are included in a SC-70 package. Equivalent Circuit (Top View) Bias Resistor ValuesR1

 ..2. Size:65K  toshiba
 rn2357.pdf pdf_icon

RN2357

RN2357 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) TENTATIVE RN2357 Unit: mmDriver Circuit, Inverter Circuit, and Switching Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process RN2307 and a diode are included in a SC-70 package. Equivalent Circuit (Top View) Bias Resistor ValuesR1

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SB1153 | BF420A | 2N3183 | 2N2473 | 2SB1144S | MM4019 | BTB1424AT3

Keywords - RN2357 transistor datasheet

 RN2357 cross reference
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