159NT1G Specs and Replacement
Type Designator: 159NT1G
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.075 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
159NT1G Substitution
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159NT1G datasheet
NTLJS4159N Power MOSFET 30 V, 7.8 A, mCoolt Single N-Channel, 2x2 mm WDFN Package Features WDFN Package Provides Exposed Drain Pad for Excellent Thermal http //onsemi.com Conduction 2x2 mm Footprint Same as SC-88 V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) in 2x2 mm Package 35 mW @ 4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate 30 V... See More ⇒
Detailed specifications: K129NT1V-1, K129NT1G-1, K129NT1D-1, K129NT1E-1, K129NT1ZH-1, 159NT1A, 159NT1B, 159NT1V, 2SA1015, 159NT1D, 159NT1E, K159NT1A, K159NT1B, K159NT1V, K159NT1G, K159NT1D, K159NT1E
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