B1129NT1V-1 PDF and Equivalents Search

B1129NT1V-1 Specs and Replacement

Type Designator: B1129NT1V-1

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.075 W

Maximum Collector-Base Voltage |Vcb|: 12 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.01 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

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B1129NT1V-1 datasheet

Detailed specifications: 159NT1E , K159NT1A , K159NT1B , K159NT1V , K159NT1G , K159NT1D , K159NT1E , 1129NTV1 , 431 , CS13001 , CS13002 , CS13003 , T5609 , T5610 , TPT5609 , TPT5610 , 2SC4977 .

History: 1129NTV1

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