B1129NT1V-1 Datasheet. Specs and Replacement

Type Designator: B1129NT1V-1  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.075 W

Maximum Collector-Base Voltage |Vcb|: 12 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.01 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

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B1129NT1V-1 datasheet

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B1129NT1V-1

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Detailed specifications: 159NT1E, K159NT1A, K159NT1B, K159NT1V, K159NT1G, K159NT1D, K159NT1E, 1129NTV1, TIP127, CS13001, CS13002, CS13003, T5609, T5610, TPT5609, TPT5610, 2SC4977

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