TPT5609
Datasheet, Equivalent, Cross Reference Search
Type Designator: TPT5609
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.75
W
Maximum Collector-Base Voltage |Vcb|: 25
V
Maximum Collector-Emitter Voltage |Vce|: 20
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 190
MHz
Collector Capacitance (Cc): 22
pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package:
TO92L
TPT5609
Transistor Equivalent Substitute - Cross-Reference Search
TPT5609
Datasheet (PDF)
..1. Size:216K mcc
tpt5609.pdf
MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth TPT5609Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Excellent linearity of Current GainNPN Epitaxial Low saturation voltageSilicon TransistorMaximum Ratings Symbol Rating Rating UnitTO-92LVCEO Collector-Emitter Voltage 20 VVCBO Collector-Base Voltage 25 V
..2. Size:206K lge
tpt5609.pdf
TPT5609 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.700 2 3 5.1001Features Excellent linearity of Current Gain 7.8008.200Low saturation voltage Complementary to TPT5610 0.600 0.800MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units0.3500.55013.800VCBO 25 VCollector- Base Voltage 14.200VCEO 20 V
9.1. Size:186K lge
tpt5610.pdf
TPT5610 TO-92L Transistor (PNP)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.7005.100 2 3 1Features Excellent linearity of Current Gain 7.8008.200 Low saturation voltage 0.600 Complementary to TPT5609 0.800MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units0.3500.55013.800VCBO -25 V Collector- Base Voltage 14.200VCEO -20
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