RN1002 Datasheet. Specs and Replacement

Type Designator: RN1002  📄📄 

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO92S

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RN1002 datasheet

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RN1002

RN1002(3RC1002) NPN /SILICON NPN DIGITAL TRANSISTOR Purpose Switching, inverter circuit, interface circuit and driver circuit applications. Features With built-in bias resistors, simplify circuit design, reduce a q... See More ⇒

Detailed specifications: S8550W, TIP122L, TIP127L, TIP41P, TIP42P, TT2190, DTC124ETA, DTC144ETA, 2N2222A, RN1201, RN1204, RN1205, RN1206, RN2002, BCX53U, BCX56U, ST13002T

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