2N6470 Specs and Replacement
Type Designator: 2N6470
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO3
2N6470 Substitution
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2N6470 datasheet
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6470 2N6471 2N6472 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area High gain at high current APPLICATIONS General-purpose types of switching and linear-amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outlin... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6470 DESCRIPTION Excellent Safe Operating Area High DC Current Gain- hFE= 20-150(Min)@IC = 5A Low Saturation Voltage- VCE(sat)= 1.3V(Max)@ IC = 5A APPLICATIONS Designed for general-purpose switching and linear amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL ... See More ⇒
2n6473 2n6474 2n6475 2n6476.pdf ![]()
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒
Detailed specifications: 2N6463, 2N6464, 2N6465, 2N6466, 2N6467, 2N6468, 2N6469, 2N647, 2SC2625, 2N6471, 2N6472, 2N647-22, 2N6473, 2N6474, 2N6475, 2N6476, 2N6477
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