2N6470 Datasheet and Replacement
Type Designator: 2N6470
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO3
2N6470 Substitution
2N6470 Datasheet (PDF)
2n6470 2n6471 2n6472.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6470 2N6471 2N6472 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area High gain at high current APPLICATIONS General-purpose types of switching and linear-amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outlin
2n6470.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6470 DESCRIPTION Excellent Safe Operating Area High DC Current Gain- : hFE= 20-150(Min)@IC = 5A Low Saturation Voltage- : VCE(sat)= 1.3V(Max)@ IC = 5A APPLICATIONS Designed for general-purpose switching and linear amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL
2n6473 2n6474 2n6475 2n6476.pdf

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
Datasheet: 2N6463 , 2N6464 , 2N6465 , 2N6466 , 2N6467 , 2N6468 , 2N6469 , 2N647 , 2SC2625 , 2N6471 , 2N6472 , 2N647-22 , 2N6473 , 2N6474 , 2N6475 , 2N6476 , 2N6477 .
History: 2N5107 | 2N925 | 2N6391
Keywords - 2N6470 transistor datasheet
2N6470 cross reference
2N6470 equivalent finder
2N6470 lookup
2N6470 substitution
2N6470 replacement
History: 2N5107 | 2N925 | 2N6391



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