2N6472 Datasheet and Replacement
Type Designator: 2N6472
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 90 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO3
2N6472 Substitution
2N6472 Datasheet (PDF)
2n6470 2n6471 2n6472.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6470 2N6471 2N6472 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area High gain at high current APPLICATIONS General-purpose types of switching and linear-amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outlin
2n6473 2n6474 2n6475 2n6476.pdf

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
Datasheet: 2N6465 , 2N6466 , 2N6467 , 2N6468 , 2N6469 , 2N647 , 2N6470 , 2N6471 , D209L , 2N647-22 , 2N6473 , 2N6474 , 2N6475 , 2N6476 , 2N6477 , 2N6478 , 2N6478A .
Keywords - 2N6472 transistor datasheet
2N6472 cross reference
2N6472 equivalent finder
2N6472 lookup
2N6472 substitution
2N6472 replacement
History: MPS-U55 | BUT57I



LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
ksc2383 | 2n3773 | b772 transistor | 50n06 | mje350 | 2n3866 | irf 3205 | 2n5088 equivalent