L2SD1781KRLT1G Specs and Replacement
Type Designator: L2SD1781KRLT1G
SMD Transistor Code: AFR
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: SOT23
L2SD1781KRLT1G Substitution
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L2SD1781KRLT1G datasheet
LESHAN RADIO COMPANY, LTD. Medium Power Transistor L2SD1781KQLT1G Series (32V, 0.8A) S-L2SD1781KQLT1G Series L2SD1781KQLT1G FFeatures 3 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) 1 (IC / IB = 500mA / 50mA) 2) High current capacity in compact 2 package. SOT-23 /TO-236AB 3) Complements the L2SB1197KXLT1G 4) We declare that the material of product compliance with RoHS requirem... See More ⇒
LESHAN RADIO COMPANY, LTD. Medium Power Transistor L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series (32V, 0.8A) L2SD1781KQLT1G FFeatures 3 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 1 2) High current capacity in compact 2 package. 3) Complements the L2SB1197KXLT1G SOT-23 /TO-236AB 4) We declare that the material of product compliance with RoHS requireme... See More ⇒
Detailed specifications: L2SC4083PWT1G, L2SC4083QWT1G, L2SC4617QT1G, L2SC4617RT1G, L2SC4617ST1G, L2SC5635WT1G, L2SC5658QM3T5G, L2SC5658RM3T5G, BC549, L2SD2114KVLT1G, L2SD2114KWLT1G, L2SD882P, L2SD882Q, L8050HPLT1G, L8050HQLT1G, L8050HRLT1G, L8050PLT1G
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