All Transistors. L2SD2114KVLT1G Datasheet

 

L2SD2114KVLT1G Datasheet and Replacement


   Type Designator: L2SD2114KVLT1G
   SMD Transistor Code: BV
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 350 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 820
   Noise Figure, dB: -
   Package: SOT23
 

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L2SD2114KVLT1G Datasheet (PDF)

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L2SD2114KVLT1G

LESHAN RADIO COMPANY, LTD.Epitaxial planar typeNPN silicon transistorL2SD2114KVLT1G Series FeaturesS-L2SD2114KVLT1G Series1) High DC current gain.hFE = 1200 (Typ.)2) High emitter-base voltage.3VEBO =12V (Min.)3) Low VCE (sat).1VCE (sat) = 0.18V (Typ.)2(IC / IB = 500mA / 20mA)4) We declare that the material of product compliance with RoHS requirements.SOT 2

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L2SD2114KVLT1G

LESHAN RADIO COMPANY, LTD.Epitaxial planar typeNPN silicon transistor L2SD2114KVLT1G Series Features S-L2SD2114KVLT1G Series1) High DC current gain.hFE = 1200 (Typ.)32) High emitter-base voltage.VEBO =12V (Min.)3) Low VCE (sat). 1VCE (sat) = 0.18V (Typ.)2(IC / IB = 500mA / 20mA)4) We declare that the material of product compliance with RoHS requirements.SOT 23 (TO

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: CHIMB3GP | T30 | L2SC4226T1G

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