All Transistors. 2N650 Datasheet

 

2N650 Datasheet and Replacement


   Type Designator: 2N650
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 30 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 90 °C
   Transition Frequency (ft): 0.75 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO5
 

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2N650 Datasheet (PDF)

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2N650

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6500 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 90V(Min) Wide Area of Safe Operation APPLICATIONS Designed for use in high-current, high-speed switching circuits such as:low-distortion power amplifiers,oscillators, switching regulators, series regulators, converters

Datasheet: 2N6494 , 2N6495 , 2N649-5 , 2N6496 , 2N6497 , 2N6498 , 2N6499 , 2N65 , TIP32C , 2N6500 , 2N6501 , 2N6502 , 2N6503 , 2N650A , 2N651 , 2N6510 , 2N6511 .

History: 2N6109 | 2N6110 | 2SD759 | 2SD758 | CHDTA123EUGP | 2N1975 | 2N614

Keywords - 2N650 transistor datasheet

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