2N650 Datasheet. Specs and Replacement

Type Designator: 2N650  📄📄 

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 30 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 90 °C

Electrical Characteristics

Transition Frequency (ft): 0.75 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO5

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2N650 datasheet

 0.1. Size:52K  inchange semiconductor

 2n6500.pdf pdf_icon

2N650

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6500 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 90V(Min) Wide Area of Safe Operation APPLICATIONS Designed for use in high-current, high-speed switching circuits such as low-distortion power amplifiers,oscillators, switching regulators, series regulators, converters... See More ⇒

Detailed specifications: 2N6494, 2N6495, 2N649-5, 2N6496, 2N6497, 2N6498, 2N6499, 2N65, 431, 2N6500, 2N6501, 2N6502, 2N6503, 2N650A, 2N651, 2N6510, 2N6511

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