2N6501 Datasheet. Specs and Replacement
Type Designator: 2N6501 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO86-2
2N6501 Substitution
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2N6501 datasheet
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6500 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 90V(Min) Wide Area of Safe Operation APPLICATIONS Designed for use in high-current, high-speed switching circuits such as low-distortion power amplifiers,oscillators, switching regulators, series regulators, converters... See More ⇒
Detailed specifications: 2N649-5, 2N6496, 2N6497, 2N6498, 2N6499, 2N65, 2N650, 2N6500, TIP32C, 2N6502, 2N6503, 2N650A, 2N651, 2N6510, 2N6511, 2N6512, 2N6513
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