All Transistors. 2N6501 Datasheet

 

2N6501 Datasheet and Replacement


   Type Designator: 2N6501
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.6 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO86-2
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2N6501 Datasheet (PDF)

 9.1. Size:52K  inchange semiconductor
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2N6501

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6500 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 90V(Min) Wide Area of Safe Operation APPLICATIONS Designed for use in high-current, high-speed switching circuits such as:low-distortion power amplifiers,oscillators, switching regulators, series regulators, converters

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: FMMT723 | 2N3322 | 2SC490B | 2SD2217 | FMMTA56R | ASY12-1 | BCM847QAS

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