All Transistors. 2N6501 Datasheet

 

2N6501 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N6501

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO86-2

2N6501 Transistor Equivalent Substitute - Cross-Reference Search

 

2N6501 Datasheet (PDF)

5.1. 2n6500.pdf Size:52K _inchange_semiconductor

2N6501
2N6501

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6500 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 90V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for use in high-current, high-speed switching circuits such as:low-distortion power amplifiers,oscillators, switching regulators, series regulators, converters, a

Datasheet: 2N649-5 , 2N6496 , 2N6497 , 2N6498 , 2N6499 , 2N65 , 2N650 , 2N6500 , BU508A , 2N6502 , 2N6503 , 2N650A , 2N651 , 2N6510 , 2N6511 , 2N6512 , 2N6513 .

 


2N6501
  2N6501
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