All Transistors. FTA1659A Datasheet

 

FTA1659A Datasheet, Equivalent, Cross Reference Search


   Type Designator: FTA1659A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 180 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO220F

 FTA1659A Transistor Equivalent Substitute - Cross-Reference Search

   

FTA1659A Datasheet (PDF)

 ..1. Size:160K  first silicon
fta1659a.pdf

FTA1659A

SEMICONDUCTORFTA1659A TECHNICAL DATAC AE DIM MILLIMETERS_A 10.16 0.20+FTA1659A TRANSISTOR (PNP) _B 15.00 0.20+_C 3.00 0.20+D 0.6250.125E 3.50 typF 2.7 typFEATURES _G 16.80 0.4+LM_+R H 0.45 0.1 High Transition Frequency _J 13.20 + 0.20_K 3.80 0.2+ High Voltage Applications DL 1.52 MAXM 1.52 MAXN N Complementary to FTC4

 9.1. Size:102K  first silicon
fta1662.pdf

FTA1659A
FTA1659A

SEMICONDUCTORFTA1662TECHNICAL DATAFEATURES AComplementary to FTC4374 CHGMAXIMUM RATINGS (TA=25 unless otherwise noted) DDSymbol Parameter Value UnitsKVCBO Collector-Base Voltage -80 V F FDIM MILLIMETERSA 4.70 MAXVCEO Collector-Emitter Voltage -80 V _+B 2.50 0.20C 1.70 MAXVEBO Emitter-Base Voltage -5 V 1 2 3D 0.45+0.15/-0.10E 4.25 MAXIC Colle

 9.2. Size:1051K  first silicon
fta1666.pdf

FTA1659A
FTA1659A

SEMICONDUCTORFTA1666TECHNICAL DATAACHGFTA1666 TRANSISTOR (PNP) D DKFEATURES F FDIM MILLIMETERS Complementary to FTC4379 A 4.70 MAX_+B 2.50 0.20C 1.70 MAX Small Flat Package 1 2 3D 0.45+0.15/-0.10E 4.25 MAX Low Saturation Voltage _+F 1.50 0.10G 0.40 TYP1. BASE Power Amplifier and Switching Application H 1.7 MAX2. COLLECTORJ 0.7 MIN

 9.3. Size:100K  first silicon
fta1661.pdf

FTA1659A

SEMICONDUCTORFTA1661TECHNICAL DATAACHPNP TransistorGFEATURES DDK Small Flat Package F FDIM MILLIMETERS High Current Application A 4.70 MAX_+B 2.50 0.20 High Voltage C 1.70 MAX1 2 3D 0.45+0.15/-0.10 High Transition Frequency E 4.25 MAX_+F 1.50 0.10G 0.40 TYP1. BASEH 1.7 MAX2. COLLECTORJ 0.7 MIN3. EMITTERK 0.5+0.15/-0.10SOT-8

 9.4. Size:328K  first silicon
fta1664.pdf

FTA1659A
FTA1659A

SEMICONDUCTORFTA1664TECHNICAL DATAACHGFTA1664 TRANSISTOR (PNP) FEATURES DDK Complementary to FTC4376 F FDIM MILLIMETERS Small Flat Package A 4.70 MAX_+B 2.50 0.20 High Current Application C 1.70 MAX1 2 3D 0.45+0.15/-0.10E 4.25 MAX_+F 1.50 0.10G 0.40 TYP1. BASEH 1.7 MAX2. COLLECTORJ 0.7 MIN3. EMITTERK 0.5+0.15/-0.10SOT-89MAX

 9.5. Size:140K  first silicon
fta1663.pdf

FTA1659A
FTA1659A

SEMICONDUCTORFTA1663TECHNICAL DATAPNP TransistorAFEATURES CH High current applications G Complementary to FTC4375 DDMAXIMUM RATINGS (TA=25 unless otherwise noted)KF FDIM MILLIMETERSSymbol Parameter Value UnitsA 4.70 MAX_+B 2.50 0.20VCBO Collector-Base Voltage -30 V C 1.70 MAX1 2 3D 0.45+0.15/-0.10VCEO Collector-Emitter Voltage -30 V E 4.25 MAX

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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