All Transistors. FTB649A Datasheet

 

FTB649A Datasheet and Replacement


   Type Designator: FTB649A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 15 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140 MHz
   Collector Capacitance (Cc): 27 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO126
 

 FTB649A Substitution

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FTB649A Datasheet (PDF)

 ..1. Size:207K  first silicon
 ftb649a.pdf pdf_icon

FTB649A

SEMICONDUCTORFTB649ATECHNICAL DATA6 9 A TRANSISTOR (PNP) DEA CLow frequency power amplifier complementary pair with FTD669/AF GDIM MILLIMETERSBA 8.3 MAXB 11.30.3C 4.15 TYP1 2 3D 3.20.2E 2.00.2 (Ta=25 unless otherwise noted) H F 2.80.1IG 3.20.1H 1.270.1Symbol Parameter Value Unit KI 1.400.115.50.2KVCBO Collector-Base Volt

Datasheet: FTB1260 , FTB1261 , FTB1366 , FTB1366F , FTB1386 , FTB1412 , FTB1424 , FTB5240 , C945 , FTB772 , FTB772D , FTB772F , FTB834 , FTC1008 , FTC1027 , FTC1318 , FTC1675 .

History: NSD6180 | 2SC4617-R | 2N5551TA | SD5109F | BUX64 | 2SD1221O | DMA364A7

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