FTB649A pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

FTB649A Specs and Replacement

Type Designator: FTB649A

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 15 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 140 MHz

Collector Capacitance (Cc): 27 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO126

FTB649A Substitution

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FTB649A datasheet

..1. Size:207K first silicon

ftb649a.pdf pdf_icon

SEMICONDUCTOR FTB649A TECHNICAL DATA 6 9 A TRANSISTOR (PNP) D E A C Low frequency power amplifier complementary pair with FTD669/A F G DIM MILLIMETERS B A 8.3 MAX B 11.3 0.3 C 4.15 TYP 1 2 3 D 3.2 0.2 E 2.0 0.2 (Ta=25 unless otherwise noted) H F 2.8 0.1 I G 3.2 0.1 H 1.27 0.1 Symbol Parameter Value Unit K I 1.40 0.1 15.5 0.2 K VCBO Collector-Base Volt... See More ⇒

Detailed specifications: FTB1260, FTB1261, FTB1366, FTB1366F, FTB1386, FTB1412, FTB1424, FTB5240, TIP41C, FTB772, FTB772D, FTB772F, FTB834, FTC1008, FTC1027, FTC1318, FTC1675