FTB649A Datasheet, Equivalent, Cross Reference Search
Type Designator: FTB649A
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 27 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO126
FTB649A Transistor Equivalent Substitute - Cross-Reference Search
FTB649A Datasheet (PDF)
..1. Size:207K first silicon
ftb649a.pdf
ftb649a.pdf
SEMICONDUCTORFTB649ATECHNICAL DATA6 9 A TRANSISTOR (PNP) DEA CLow frequency power amplifier complementary pair with FTD669/AF GDIM MILLIMETERSBA 8.3 MAXB 11.30.3C 4.15 TYP1 2 3D 3.20.2E 2.00.2 (Ta=25 unless otherwise noted) H F 2.80.1IG 3.20.1H 1.270.1Symbol Parameter Value Unit KI 1.400.115.50.2KVCBO Collector-Base Volt
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
