FTD1760 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

FTD1760 Specs and Replacement

Type Designator: FTD1760

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.5 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 90 MHz

Collector Capacitance (Cc): 40 pF

Forward Current Transfer Ratio (hFE), MIN: 82

Noise Figure, dB: -

Package: TO252 DPAK

FTD1760 Substitution

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FTD1760 datasheet

..1. Size:307K first silicon

ftd1760.pdf pdf_icon

SEMICONDUCTOR FTD1760 TECHNICAL DATA FTD1760 TRANSISTOR (NPN) A I C J FEATURES Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) Complements the FTB1184. DIM MILLIMETERS A 6 50 0 2 B 5 60 0 2 C 5 20 0 2 D 1 50 0 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) E 2 70 0 2 F 2 30 0 1 Symbol Parameter Value Unit H H 1 00 MAX I 2 30 0 ... See More ⇒

9.1. Size:842K first silicon

ftd1781k.pdf pdf_icon

SEMICONDUCTOR FTD1781K TECHNICAL DATA Medium Power Transistor (32V, 0.8A) Features 3 1) Very low VCE(sat). VCE(sat) 0.4 V (Typ.) 2 (IC / IB = 500mA / 50mA) 1 2) High current capacity in compact package. SOT 23 3) Complements the FTB1197K 4) We declare that the material of product compliance with RoHS requirements. Structure Epitaxial planar type NPN silicon transistor C... See More ⇒

Detailed specifications: FTC8050H, FTC9012S, FTC9013S, FTC945B, FTD1304, FTD1499, FTD1616A, FTD1624, TIP42, FTD1781K, FTD1898, FTD1899, FTD2058, FTD2058F, FTD2097, FTD2098, FTD2114K