FTD1781K Specs and Replacement
Type Designator: FTD1781K
SMD Transistor Code: AFR_AFQ
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: SOT23
FTD1781K Substitution
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FTD1781K datasheet
SEMICONDUCTOR FTD1781K TECHNICAL DATA Medium Power Transistor (32V, 0.8A) Features 3 1) Very low VCE(sat). VCE(sat) 0.4 V (Typ.) 2 (IC / IB = 500mA / 50mA) 1 2) High current capacity in compact package. SOT 23 3) Complements the FTB1197K 4) We declare that the material of product compliance with RoHS requirements. Structure Epitaxial planar type NPN silicon transistor C... See More ⇒
SEMICONDUCTOR FTD1760 TECHNICAL DATA FTD1760 TRANSISTOR (NPN) A I C J FEATURES Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) Complements the FTB1184. DIM MILLIMETERS A 6 50 0 2 B 5 60 0 2 C 5 20 0 2 D 1 50 0 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) E 2 70 0 2 F 2 30 0 1 Symbol Parameter Value Unit H H 1 00 MAX I 2 30 0 ... See More ⇒
Detailed specifications: FTC9012S, FTC9013S, FTC945B, FTD1304, FTD1499, FTD1616A, FTD1624, FTD1760, C3198, FTD1898, FTD1899, FTD2058, FTD2058F, FTD2097, FTD2098, FTD2114K, FTD2118
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