All Transistors. FTD1781K Datasheet

 

FTD1781K Datasheet and Replacement


   Type Designator: FTD1781K
   SMD Transistor Code: AFR_AFQ
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 32 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT23
      - BJT Cross-Reference Search

   

FTD1781K Datasheet (PDF)

 ..1. Size:842K  first silicon
 ftd1781k.pdf pdf_icon

FTD1781K

SEMICONDUCTORFTD1781KTECHNICAL DATAMedium Power Transistor(32V, 0.8A)Features31) Very low VCE(sat).VCE(sat) 0.4 V (Typ.)2(IC / IB = 500mA / 50mA)12) High current capacity in compactpackage. SOT 23 3) Complements the FTB1197K4)We declare that the material of product compliance with RoHS requirements.StructureEpitaxial planar typeNPN silicon transistor C

 9.1. Size:307K  first silicon
 ftd1760.pdf pdf_icon

FTD1781K

SEMICONDUCTORFTD1760TECHNICAL DATA FTD1760 TRANSISTOR (NPN) A ICJFEATURES Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) Complements the FTB1184. DIM MILLIMETERSA 6 50 0 2B 5 60 0 2C 5 20 0 2D 1 50 0 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted)E 2 70 0 2F 2 30 0 1Symbol Parameter Value Unit HH 1 00 MAXI 2 30 0

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SD1247U | BD237S | CTU83 | BDX67L | MMS8550 | SK3715 | UN9110S

Keywords - FTD1781K transistor datasheet

 FTD1781K cross reference
 FTD1781K equivalent finder
 FTD1781K lookup
 FTD1781K substitution
 FTD1781K replacement

 

 
Back to Top

 


 
.