FTD1781K PDF and Equivalents Search

 

FTD1781K Specs and Replacement

Type Designator: FTD1781K

SMD Transistor Code: AFR_AFQ

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 32 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT23

 FTD1781K Substitution

- BJT ⓘ Cross-Reference Search

 

FTD1781K datasheet

 ..1. Size:842K  first silicon

ftd1781k.pdf pdf_icon

FTD1781K

SEMICONDUCTOR FTD1781K TECHNICAL DATA Medium Power Transistor (32V, 0.8A) Features 3 1) Very low VCE(sat). VCE(sat) 0.4 V (Typ.) 2 (IC / IB = 500mA / 50mA) 1 2) High current capacity in compact package. SOT 23 3) Complements the FTB1197K 4) We declare that the material of product compliance with RoHS requirements. Structure Epitaxial planar type NPN silicon transistor C... See More ⇒

 9.1. Size:307K  first silicon

ftd1760.pdf pdf_icon

FTD1781K

SEMICONDUCTOR FTD1760 TECHNICAL DATA FTD1760 TRANSISTOR (NPN) A I C J FEATURES Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) Complements the FTB1184. DIM MILLIMETERS A 6 50 0 2 B 5 60 0 2 C 5 20 0 2 D 1 50 0 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) E 2 70 0 2 F 2 30 0 1 Symbol Parameter Value Unit H H 1 00 MAX I 2 30 0 ... See More ⇒

Detailed specifications: FTC9012S, FTC9013S, FTC945B, FTD1304, FTD1499, FTD1616A, FTD1624, FTD1760, C3198, FTD1898, FTD1899, FTD2058, FTD2058F, FTD2097, FTD2098, FTD2114K, FTD2118

Keywords - FTD1781K pdf specs

 FTD1781K cross reference

 FTD1781K equivalent finder

 FTD1781K pdf lookup

 FTD1781K substitution

 FTD1781K replacement

 

 

 

 

↑ Back to Top
.