All Transistors. FTD2114K Datasheet

 

FTD2114K Datasheet and Replacement


   Type Designator: FTD2114K
   SMD Transistor Code: BV_BW
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 350 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 800
   Noise Figure, dB: -
   Package: SOT23
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FTD2114K Datasheet (PDF)

 ..1. Size:1582K  first silicon
 ftd2114k.pdf pdf_icon

FTD2114K

SEMICONDUCTORFTD2114KTECHNICAL DATAEpitaxial planar typeNPN silicon transistorFeatures1) High DC current gain.3hFE = 1200 (Typ.)2) High emitter-base voltage.2VEBO =12V (Min.)13) Low VCE (sat).VCE (sat) = 0.18V (Typ.) SOT 23(IC / IB = 500mA / 20mA)4) We declare that the material of product compliance with RoHS requirements.COLLECTORAbsolute maximum rating

 8.1. Size:325K  first silicon
 ftd2118.pdf pdf_icon

FTD2114K

SEMICONDUCTORFTD2118TECHNICAL DATAFTD2118 TRANSISTOR (NPN) FEATURES AICJ Low VCE(sat). Excellent DC Current Gain Characteristics. DIM MILLIMETERSA 6 50 0 2B 5 60 0 2MAXIMUM RATINGS (Ta=25)C 5 20 0 2D 1 50 0 2Symbol Parameter Value Unit E 2 70 0 2F 2 30 0 1HVCBO Collector-Base Voltage 50 V H 1 00 MAXI 2 30 0 2LF FVCEO Col

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SC3962 | BF420A | 2N3183 | 2N2473 | 2SB1144S | MM4019 | BTB1424AT3

Keywords - FTD2114K transistor datasheet

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