A966Y Datasheet and Replacement
Type Designator: A966Y
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: TO92L
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A966Y Datasheet (PDF)
a966o a966y.pdf

A966 PNP silicon APPLICATION: Audio Power Amplifier Applications.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -30 VCollector-emitter voltage VCEO -30 VTO-92L1Emitter-base voltage VEBO -5 V1. Emitter 2. Collector 3. BaseCollector current IC -1.5 ACollector Power Dissipation PC 900 mWJunc
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: IMD3A | 2C1893 | BU5027S | 2SC1032 | MMBT5551Q | PXT8550C | 2SD189
Keywords - A966Y transistor datasheet
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History: IMD3A | 2C1893 | BU5027S | 2SC1032 | MMBT5551Q | PXT8550C | 2SD189



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