13005ED Datasheet, Equivalent, Cross Reference Search
Type Designator: 13005ED
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 32 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 6 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO220
13005ED Transistor Equivalent Substitute - Cross-Reference Search
13005ED Datasheet (PDF)
13005ed.pdf
R13005ED www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222
3dd13005ed.pdf
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD13005ED MAIN CHARACTERISTICS Package I 4A CV 450V CEOP (IPAK/TO-126/126F/220HF) 40W CP (DPAK) 50W CP (TO-220/220C/262/263) 75W CTO-220C-S1 TO-220C TO-220 APPLICATIONS Energy-saving light Electronic ba
s13005ed.pdf
RS13005ED www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222
13005ec.pdf
UNISONIC TECHNOLOGIES CO., LTD 13005EC Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 850 V * Reverse bias SOA with inductive loads @ TC =
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: GES4125
