13005ED Specs and Replacement
Type Designator: 13005ED
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 32 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 6 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO220
13005ED Substitution
- BJT ⓘ Cross-Reference Search
13005ED datasheet
R 13005ED www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast and Switch-mode power supplies 2 2 2 ... See More ⇒
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13005ED MAIN CHARACTERISTICS Package I 4A C V 450V CEO P (IPAK/TO-126/126F/220HF) 40W C P (DPAK) 50W C P (TO-220/220C/262/263) 75W C TO-220C-S1 TO-220C TO-220 APPLICATIONS Energy-saving light Electronic ba... See More ⇒
UNISONIC TECHNOLOGIES CO., LTD 13005EC Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 850 V * Reverse bias SOA with inductive loads @ TC = ... See More ⇒
Detailed specifications: 13001-A , 13003AD , 13003B , 13005A , 13005AD , 13005ADL , 13005D , 13005DL , 2SB817 , 13005F , 13005S , 13005SD , 13005SDL , 13007DL , 13007S , 13007T , 13009A .
History: 2SC321H | 2SC329 | 9014T | 2SC3214 | 2N3767SM | 2SC3215 | 13005D
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