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13005ED . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 13005ED
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 32 W
   Tensión colector-base (Vcb): 700 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 9 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 6 MHz
   Ganancia de corriente contínua (hfe): 15
   Paquete / Cubierta: TO220

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13005ED Datasheet (PDF)

 ..1. Size:117K  jdsemi
 13005ed.pdf

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R13005ED www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

 0.1. Size:1011K  jilin sino
 3dd13005ed.pdf

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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD13005ED MAIN CHARACTERISTICS Package I 4A CV 450V CEOP (IPAK/TO-126/126F/220HF) 40W CP (DPAK) 50W CP (TO-220/220C/262/263) 75W CTO-220C-S1 TO-220C TO-220 APPLICATIONS Energy-saving light Electronic ba

 0.2. Size:116K  jdsemi
 s13005ed.pdf

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RS13005ED www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

 8.1. Size:158K  utc
 13005ec.pdf

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UNISONIC TECHNOLOGIES CO., LTD 13005EC Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 850 V * Reverse bias SOA with inductive loads @ TC =

Otros transistores... 13001-A , 13003AD , 13003B , 13005A , 13005AD , 13005ADL , 13005D , 13005DL , 13001-A , 13005F , 13005S , 13005SD , 13005SDL , 13007DL , 13007S , 13007T , 13009A .

 

 
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