13005ED . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 13005ED
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 32 W
Tensión colector-base (Vcb): 700 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 9 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 6 MHz
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta: TO220
Búsqueda de reemplazo de 13005ED
13005ED Datasheet (PDF)
13005ed.pdf

R13005ED www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222
3dd13005ed.pdf

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD13005ED MAIN CHARACTERISTICS Package I 4A CV 450V CEOP (IPAK/TO-126/126F/220HF) 40W CP (DPAK) 50W CP (TO-220/220C/262/263) 75W CTO-220C-S1 TO-220C TO-220 APPLICATIONS Energy-saving light Electronic ba
s13005ed.pdf

RS13005ED www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222
13005ec.pdf

UNISONIC TECHNOLOGIES CO., LTD 13005EC Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES * VCEO(SUS)= 850 V * Reverse bias SOA with inductive loads @ TC =
Otros transistores... 13001-A , 13003AD , 13003B , 13005A , 13005AD , 13005ADL , 13005D , 13005DL , 2N4401 , 13005F , 13005S , 13005SD , 13005SDL , 13007DL , 13007S , 13007T , 13009A .
History: 2SD600KD
History: 2SD600KD



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