13007S Specs and Replacement

Type Designator: 13007S

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 75 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector-Emitter Voltage |Vce|: 350 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO220

 13007S Substitution

- BJT ⓘ Cross-Reference Search

 

13007S datasheet

 ..1. Size:121K  jdsemi

13007s.pdf pdf_icon

13007S

R 13007S www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Computer Switch Power Supply and All kinds of power switch circuit 2 2 2 FEATUR... See More ⇒

 0.1. Size:377K  winsemi

sbp13007s.pdf pdf_icon

13007S

SBP13007-S SBP13007-S SBP13007-S SBP13007-S High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description G... See More ⇒

 9.1. Size:376K  1

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13007S

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Detailed specifications: 13005D, 13005DL, 13005ED, 13005F, 13005S, 13005SD, 13005SDL, 13007DL, 2N4401, 13007T, 13009A, 13009SDL, 13009T, 3866S, 3866SF, B647, B772P

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