B772PC
Datasheet, Equivalent, Cross Reference Search
Type Designator: B772PC
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 10
W
Maximum Collector-Base Voltage |Vcb|: 40
V
Maximum Collector-Emitter Voltage |Vce|: 30
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 3
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 50
MHz
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package:
TO252
TO251
B772PC
Transistor Equivalent Substitute - Cross-Reference Search
B772PC
Datasheet (PDF)
..1. Size:114K jdsemi
b772pc 2.pdf
RB772PC www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si PNP RoHS COMPLIANT 111APPLICATION 1ChargerEmergency lamp and Electric toy control circuit 222FEATURES 2
..2. Size:114K jdsemi
b772pc.pdf
RB772PC www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si PNP RoHS COMPLIANT 111APPLICATION 1ChargerEmergency lamp and Electric toy control circuit 2222FEATURES 2
9.1. Size:116K jdsemi
b772p.pdf
RB772P www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si PNP RoHS COMPLIANT 111APPLICATION 1ChargerEmergency lamp and Electric toy control circuit 222FEATURES 2
9.2. Size:751K cn twgmc
b772r b772q b772p b772e.pdf
D882AO3400SI2305B772PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 V -IC Collector Current 3 A-ICPPea
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