B772PC PDF Specs and Replacement
Type Designator: B772PC
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO252 TO251
B772PC Substitution
B772PC PDF detailed specifications
b772pc 2.pdf
R B772PC www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si PNP RoHS COMPLIANT 1 1 1 APPLICATION 1 Charger Emergency lamp and Electric toy control circuit 2 2 2 FEATURES 2 ... See More ⇒
b772pc.pdf
R B772PC www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si PNP RoHS COMPLIANT 1 1 1 APPLICATION 1 Charger Emergency lamp and Electric toy control circuit 2 2 2 2 FEATURES 2... See More ⇒
b772p.pdf
R B772P www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si PNP RoHS COMPLIANT 1 1 1 APPLICATION 1 Charger Emergency lamp and Electric toy control circuit 2 2 2 FEATURES 2 ... See More ⇒
b772r b772q b772p b772e.pdf
D882 AO3400 SI2305 B772 PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V -IC Collector Current 3 A -ICP Pea... See More ⇒
Detailed specifications: 13007T , 13009A , 13009SDL , 13009T , 3866S , 3866SF , B647 , B772P , 2SA1015 , BU102D , BU102S , BU103AD , BU103AH , BU103BD , BU103BH , BU103DH , BU13003D .
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