BU3150AF Specs and Replacement
Type Designator: BU3150AF
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 1100 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO220F
BU3150AF Substitution
- BJT ⓘ Cross-Reference Search
BU3150AF datasheet
R BU3150AF www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Computer aided power and Switch-mode power supplies 2 2 2 FEATURES 2 H... See More ⇒
TEL 0755-29799516 FAX 0755-29799515 Shenzhen Jingdao Electronic Co.,Ltd. Http //www.jdsemi.cn BU3150 NPN ... See More ⇒
R BU3150T www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Computer aided power and Switch-mode power supplies 2 2 2 FEATURES 2 Hi... See More ⇒
Detailed specifications: BU103BH, BU103DH, BU13003D, BU13003F, BU202ADL, BU202DL, BU203DL, BU206DL, D882P, BU3150BF, BU3150F, BU3150F-A, BU3150T, BU5027A, BU5027AF, BU5027S, BU6084B
Keywords - BU3150AF pdf specs
BU3150AF cross reference
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History: FJN3304R | STC603PI
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