All Transistors. DK55A Datasheet

 

DK55A Datasheet and Replacement


   Type Designator: DK55A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 53 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO251
 

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DK55A Datasheet (PDF)

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DK55A

RDK55A www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22

Datasheet: DK52D , DK53AD , DK53ADL , DK53D , DK53DL , DK53H , DK53TD , DK54DL , 2SA1943 , DK55ED , DK55SD , E13005SDL , H13003 , H13003AD , H13003ADL , H13003AH , H13003D .

History: 2N5607 | 2N1984 | HSBD441

Keywords - DK55A transistor datasheet

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