DK55ED Specs and Replacement
Type Designator: DK55ED
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 29 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 6 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO251
DK55ED Substitution
- BJT ⓘ Cross-Reference Search
DK55ED datasheet
R DK55ED www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast and Switch-mode power supplies 2 2 2 F... See More ⇒
Detailed specifications: DK53AD , DK53ADL , DK53D , DK53DL , DK53H , DK53TD , DK54DL , DK55A , A1015 , DK55SD , E13005SDL , H13003 , H13003AD , H13003ADL , H13003AH , H13003D , H13003DL .
History: E13005SDL
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