All Transistors. DK55ED Datasheet

 

DK55ED Datasheet and Replacement


   Type Designator: DK55ED
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 29 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 6 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO251
 

 DK55ED Substitution

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DK55ED Datasheet (PDF)

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DK55ED

RDK55ED www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222F

Datasheet: DK53AD , DK53ADL , DK53D , DK53DL , DK53H , DK53TD , DK54DL , DK55A , TIP3055 , DK55SD , E13005SDL , H13003 , H13003AD , H13003ADL , H13003AH , H13003D , H13003DL .

History: DTC024XM | DK54DL | BC486 | BU3150T

Keywords - DK55ED transistor datasheet

 DK55ED cross reference
 DK55ED equivalent finder
 DK55ED lookup
 DK55ED substitution
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