3DD13003_M8D Specs and Replacement
Type Designator: 3DD13003_M8D
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO220AB
3DD13003_M8D Substitution
3DD13003_M8D datasheet
3dd13003 m8d.pdf
NPN R 3DD13003 M8D 3DD13003 M8D NPN VCEO 400 V IC 2 A Ptot W TC=25 60 ... See More ⇒
3dd13003 m6d.pdf
NPN R 3DD13003 M6D 3DD13003 M6D NPN VCEO 400 V IC 2 A Ptot TC=25 50 W ... See More ⇒
3dd13003 to-220-3l.pdf
3DD13003(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features power switching applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuou... See More ⇒
3dd13003 to-126.pdf
3DD13003(NPN) TO-126 Transistor TO-126 1.BASE 2.COLLECTOR 3.EMITTER 3 2 1 Features power switching applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2.500 7.400 2.900 1.100 7.800 Symbol Parameter Value Units 1.500 VCBO Collector-Base Voltage 700 V 3.900 3.000 4.100 VCEO Collector-Emitter Voltage 400 V 3.200 10.600 0.000 VEBO Emitter-Base V... See More ⇒
Detailed specifications: 3DD13003_H1D , 3DD13003_H6D , 3DD13003_H8D , 3DD13003_J6D , 3DD13003_J8D , 3DD13003_K6 , 3DD13003_K8 , 3DD13003_M6D , BC549 , 3DD13003_S1D , 3DD13003_SUD , 3DD13003_U1D , 3DD13003_U3D , 3DD13003_U6D , 3DD13003_V1D , 3DD13003_V6D , 3DD13003_VUD .
Keywords - 3DD13003_M8D pdf specs
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